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参数资料
| 型号： | MJ14003 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 功率晶体管 |
| 英文描述： | COMPLEMENTARY SILICON POWER TRANSITORS |
| 中文描述： | 60 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-204AA |
| 封装： | CASE 197A-05, TO-3, TO-204, 2 PIN |
| 文件页数： | 3/6页 |
| 文件大小： | 241K |
| 代理商： | MJ14003 |
3
Motorola Bipolar Power Transistor Device Data
V
V
300
200
Figure 3. DC Current Gain
IC, COLLECTOR CURRENT (AMPS)
0.7 1.0
2.0
3.0
20
30
20
h
VCE = 3.0 V
100
70
50
7.0
5.0
5.0
10
3.0
10
Figure 4. DC Current Gain
2.8
0.1
IB, BASE CURRENT (AMPS)
Figure 5. Collector Saturation Region
1.0
10
TJ = 25
°
C
5.0
3.0
2.0
0.5
2.0
1.2
0.8
0.4
7.0
30
50
70
0
1.6
2.4
7.0
0.7
0.3
0.2
300
200
IC, COLLECTOR CURRENT (AMPS)
0.7 1.0
2.0
3.0
20
30
20
h
100
70
50
7.0
5.0
5.0
10
3.0
10
Figure 6. Collector Saturation Region
2.8
0.1
IB, BASE CURRENT (AMPS)
1.0
10
5.0
3.0
2.0
0.5
2.0
1.2
0.8
0.4
7.0
30
50
70
0
1.6
2.4
7.0
0.7
0.3
0.2
IC = 60 A
TJ = 25
°
C
NPN
MJ14002
PNP
MJ14001, MJ14003
2.8
0.7
IC, COLLECTOR CURRENT (AMPS)
Figure 7. “On” Voltages
10
V
TJ = 25
°
C
50
30
20
5.0
2.0
1.2
0.8
0.4
0
1.6
2.4
70
7.0
2.0
1.0
VBE(sat) @ IC/IB = 10
3.0
VBE(on) @ VCE = 3.0 V
VCE(sat) @ IC/IB = 10
2.8
0.7
IC, COLLECTOR CURRENT (AMPS)
Figure 8. “On” Voltages
10
V
TJ = 25
°
C
50
30
20
5.0
2.0
1.2
0.8
0.4
0
1.6
2.4
70
7.0
2.0
1.0
3.0
TJ = –55
°
C
TJ = 25
°
C
TJ = 150
°
C
VCE = 3.0 V
TJ = –55
°
C
TJ = 25
°
C
TJ = 150
°
C
IC = 25 A
IC = 10 A
IC = 60 A
IC = 25 A
IC = 10 A
VBE(sat) @ IC/IB = 10
VBE(on) @ VCE = 3.0 V
VCE(sat) @ IC/IB = 10
TYPICAL ELECTRICAL CHARACTERISTICS
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