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参数资料
| 型号： | MJ15003.MOD |
| 厂商： | SEMELAB LTD |
| 元件分类： | 功率晶体管 |
| 英文描述： | 20 A, 140 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
| 封装： | TO-3, 2 PIN |
| 文件页数： | 1/2页 |
| 文件大小： | 22K |
| 代理商： | MJ15003.MOD |
MJ15003 - NPN
MJ15004 - PNP
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Document Number 3734
Issue 1
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
VCEO
Collector – Emitter Voltage
VCBO
Collector – Base Voltage
VEBO
Emitter – Base Voltage
IC
Continuous Collector Current
IB
Base Current
Ptot
Total Dissipation at Tcase = 25°C
Derate above 25°C
TSTG , TJ
Operating and Storage Junction Temperature Range
140V
5V
20A
5A
250W
1.43W/°C
–65 to +200°C
MECHANICAL DATA
Dimensions in mm (inches)
4 0 .0 1 ( 1 .5 7 5 )
Ma x .
4. 47 ( 0. 176)
Ra d .
2 P l s .
2 2 .2 3 ( 0 .8 7 5 )
Ma x .
1 1 .4 3 ( 0 .4 5 0 )
6. 35 ( 0. 250)
1 2 .1 9 ( 0 .4 8 )
1 1 .1 8 ( 0 .4 4 )
1. 63 ( 0. 064)
1. 52 ( 0. 060)
1. 57 ( 0. 062)
1. 47 ( 0. 058)
Di a .
3 0 .4 0 ( 1 .1 9 7 )
2 9 .9 0 ( 1 .1 7 7 )
1 6 .9 7 ( 0 .6 6 8 )
1 6 .8 7 ( 0 .6 6 4 )
4. 09 ( 0. 161)
3. 84 ( 0. 151)
2 P l s
1 1 .1 8 ( 0 .4 4 0 )
1 0 .6 7 ( 0 .4 2 0 )
26. 6 7
( 1 . 0 50)
Ma x .
COMPLEMENTARY
DARLINGTON
POWER TRANSISTOR
FEATURES
HIGH DC CURRENT GAIN
hFE = 25 Min @ IC = 5A
FOR LOW DISTORTION COMPLEMENTARY
DESIGNS
JUNCTION TEMPERATURE TO +200°C
TO–3 (TO-204AA)
Pin 1 – Base
Pin 2 – Emitter
Case – Collector
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
APPLICATIONS
The MJ15003 and MJ15004 are power
transistors designed for high power audio
and other linear applications.
相关PDF资料 |
PDF描述 |
|---|---|
| MJ15004.MOD | 20 A, 140 V, PNP, Si, POWER TRANSISTOR, TO-204AA |
| MJ15004 | 20 A, 140 V, PNP, Si, POWER TRANSISTOR, TO-204AA |
| MJ15003 | 20 A, 140 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
| MJ15015.MOD | 15 A, 120 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
| MJ15015 | 15 A, 120 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MJ15004 | 功能描述:两极晶体管 - BJT 20A 140V 250W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJ15004 | 制造商:SPC Multicomp 功能描述:TRANSISTOR PNP TO-3 |
| MJ15004G | 功能描述:两极晶体管 - BJT 20A 140V 250W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJ15011 | 功能描述:两极晶体管 - BJT 10A 250V 200W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJ15011G | 功能描述:两极晶体管 - BJT 10A 250V 200W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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