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参数资料
| 型号： | MJ15021 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 功率晶体管 |
| 英文描述： | 4 A, 250 V, PNP, Si, POWER TRANSISTOR, TO-204AA |
| 封装： | CASE 1-07, TO-3, 2 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 152K |
| 代理商： | MJ15021 |
Semiconductor Components Industries, LLC, 2006
August, 2006 Rev. 2
1
Publication Order Number:
MJ15020/D
MJ15020 NPN
MJ15021 PNP
Preferred Devices
Complementary Silicon
Power Transistors
These transistors are designed for use as high frequency drivers in
Audio Amplifiers.
Features
High Gain Complementary Silicon Power Transistors
Safe Operating Area 100% Tested 50 V, 3.0 A, 1.0 Sec
Excellent Frequency Response fT = 20 MHz min
PbFree Packages are Available*
MAXIMUM RATINGS
Rating
Symbol
MJ15020
MJ15021
Unit
CollectorEmitter Voltage
VCEO
250
Vdc
CollectorBase Voltage
VCBO
250
Vdc
EmitterBase Voltage
VEBO
7.0
Vdc
Collector Current Continuous
IC
4.0
Adc
Base Current Continuous
IB
2.0
Adc
Emitter Current Continuous
IE
6.0
Adc
Total Device Dissipation @ TC = 25_C
Derate above 25_C
PD
150
0.86
W
W/_C
Operating and Storage Junction
Temperature Range
TJ, Tstg
65 to +200
_C
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max
Unit
Thermal Resistance, JunctiontoCase
RqJC
1.17
_C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
4.0 AMPERES
COMPLEMENTARY SILICON-
POWER TRANSISTORS
200 250 VOLTS, 150 WATTS
http://onsemi.com
MARKING DIAGRAM
Device
Package
Shipping
ORDERING INFORMATION
MJ15020
TO204
100 Units / Tray
MJ15020G
TO204
(PbFree)
100 Units / Tray
MJ1502xG
AYWW
MEX
TO204AA (TO3)
CASE 107
STYLE 1
MJ1502x = Device Code
x = 0 or 1
G= PbFree Package
A
= Assembly Location
Y
= Year
WW
= Work Week
MEX
= Country of Origin
MJ15021
TO204
100 Units / Tray
MJ15021G
TO204
(PbFree)
100 Units / Tray
Preferred devices are recommended choices for future use
and best overall value.
相关PDF资料 |
PDF描述 |
|---|---|
| MJ15023 | 16 A, 250 V, PNP, Si, POWER TRANSISTOR, TO-204AA |
| MJ15023.MOD | 16 A, 250 V, PNP, Si, POWER TRANSISTOR, TO-204AA |
| MJ15025 | 16 A, 250 V, PNP, Si, POWER TRANSISTOR, TO-204AA |
| MJ15025.MOD | 16 A, 250 V, PNP, Si, POWER TRANSISTOR, TO-204AA |
| MJ16010.MOD | 15 A, 450 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MJ15021G | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Complementary Silicon Power Transistors |
| MJ15022 | 功能描述:两极晶体管 - BJT 16A 200V 250W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJ15022_06 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Silicon Power Transistors |
| MJ15022G | 功能描述:两极晶体管 - BJT 16A 200V 250W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJ15023 | 功能描述:两极晶体管 - BJT 16A 200V 250W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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