- 您现在的位置：买卖IC网 > PDF目录95946 > MJ802-BP (MICRO COMMERCIAL COMPONENTS) 30 A, 90 V, NPN, Si, POWER TRANSISTOR, TO-3 PDF资料下载
参数资料
| 型号： | MJ802-BP |
| 厂商： | MICRO COMMERCIAL COMPONENTS |
| 元件分类： | 功率晶体管 |
| 英文描述： | 30 A, 90 V, NPN, Si, POWER TRANSISTOR, TO-3 |
| 封装： | TO-3, 2 PIN |
| 文件页数： | 1/1页 |
| 文件大小： | 88K |
| 代理商： | MJ802-BP |
NPN High Power
Silicon Transistor
Features
With TO-3 package
Complement to PNP MJ4502
Maximum Ratings
Symbol
Rating
Unit
VCEO
Collector-Emitter Voltage
90
V
VCB
Collector-Base Voltage
100
V
VEB
Emitter-Base Voltage
4.0
V
IC
Collector Current
30
A
PD
Collector power dissipation
200
W
TJ
Junction Temperature
200
℃
TSTG
Storage Temperature
-65 to +200
℃
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter
Min
Max
Units
OFF CHARACTERISTICS
VCEO(SUS)
Collector-Emitter
sustaining Voltage*
(IC=200mAdc, IB=0)
90
---
Vdc
ICBO
Collector-Base Cutoff Current
(VCB=100Vdc,IE=0)
---
1.0
mAdc
IEBO
Emitter-Base Cutoff Current
(VEB=4.0Vdc, IC=0)
---
5.0
mAdc
ON CHARACTERISTICS
hFE
Forward Current Transfer ratio*
(IC=7.5Adc, VCE=2.0Vdc)
25
100
VCE(sat)
Collector-Emitter Saturation Voltage
(IC=7.5Adc, IB=0.75Adc)
0.8
Vdc
VBE(sat)
Base-Emitter Saturation Voltage
(IC=7.5Adc, IB=0.75Adc)
1.3
Vdc
DYNAMIC CHARACTERISTICS
fT
Current Gain — Bandwidth Product
(VCE=10Vdc, IB=1.0Adc, f=1.0MHz)
2.0
MHz
*Pulse Test: Pulse Width
300 s, Duty Cycle
2.0%.
MJ802
omponents
20736 Marilla
Street Chatsworth
!"#
$% !"#
MCC
www.mccsemi.com
Revision: 1
2003/04/21
TO-3
A
N
E
D
C
K
PIN 1.
BASE
PIN 2.
EMITTER
CASE.
COLLECTOR
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
1.550
REF
39.37
REF
B
-----
1.050
-----
26.67
C
.250
.335
6.35
8.51
D
.038
.043
0.97
1.09
E
0.55
0.70
1.40
1.77
G
.430
BSC
10.92
BSC
H
.215
BSC
5.46
BSC
K
.440
.480
11.18
12.19
L
.665
BSC
16.89
BSC
N
-----
.830
-----
21.08
Q
.151
.165
3.84
4.19
U
1.187
BSC
30.15
BSC
V
.131
.188
3.33
4.77
H
V
U
L
G
B
Q
1
2
相关PDF资料 |
PDF描述 |
|---|---|
| MJ802 | 30 A, 90 V, NPN, Si, POWER TRANSISTOR, TO-3 |
| MJ8100R1 | 5 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-205AD |
| MJ8100RR1 | 5 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-205AD |
| MJ8100R | 5 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-205AD |
| MJ8504 | 10 A, NPN, Si, POWER TRANSISTOR, TO-3 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MJ802G | 功能描述:两极晶体管 - BJT 30A 90V 200W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJ80C31 | 制造商:Atmel Corporation 功能描述: |
| MJ-80C32E-30 | 制造商:ATMEL 制造商全称:ATMEL Corporation 功能描述:Rad. Tolerant 8-bit ROMless Microcontroller |
| MJ-80C32E-30-E | 制造商:ATMEL 制造商全称:ATMEL Corporation 功能描述:Rad. Tolerant 8-bit ROMless Microcontroller |
| MJ8100 | 制造商:ASI 功能描述:8100 N11E4C |
发布紧急采购，3分钟左右您将得到回复。