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参数资料
| 型号： | MJB6488 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 功率晶体管 |
| 英文描述： | 15 A, 80 V, NPN, Si, POWER TRANSISTOR |
| 封装： | CASE 418B-04, D2PAK-3 |
| 文件页数： | 4/4页 |
| 文件大小： | 91K |
| 代理商： | MJB6488 |
MJB6488, MJB6491
http://onsemi.com
403
V
CE
,COLLECT
OREMITTER
VOL
TAGE
(V)
V
CE
,COLLECT
OREMITTER
VOL
TAGE
(V)
500
Figure 28. DC Current Gain
IC, COLLECTOR CURRENT (A)
0.5
0.2
10
1.0
2.0
100
50
h
FE
,DC
CURRENT
GAIN
TJ = 150°C
25
°C
55
°C
200
20
NPN MJB6488
PNP MJB6491
IC, COLLECTOR CURRENT (A)
h
FE
,DC
CURRENT
GAIN
TJ = 150°C
25
°C
55
°C
5.0
VCE = 2.0 V
10
5.0
0.5
0.2
10
1.0
2.0
20
5.0
500
100
50
200
20
5.0
10
5.0
100
IC = 1.0 A
TJ = 25°C
10
4.0 A
8.0 A
20
50
2000
1000
200
500
Figure 29. Collector Saturation Region
2.0
IB, BASE CURRENT (mA)
5.0
100
5000
1.8
1.6
1.4
1.2
IC = 1.0 A
TJ = 25°C
0
10
4.0 A
8.0 A
20
50
1.0
0.2
0.6
0.8
0.4
2000
1000
200
500
5000
2.0
1.8
1.6
1.4
1.2
0
1.0
0.2
0.6
0.8
0.4
IB, BASE CURRENT (mA)
VCE(sat) @ IC/IB = 10
TJ = 25°C
VBE @ VCE = 2.0 V
2.8
1.6
1.2
2.4
0
0.8
0.4
0.2
0.5
2.0
20
10
1.0
5.0
VBE(sat) @ IC/IB = 10
2.0
IC, COLLECTOR CURRENT (AMP)
V
,VOL
T
AGE
(V)
Figure 30. “On” Voltages
IC, COLLECTOR CURRENT (AMP)
V
,VOL
T
AGE
(V)
VCE(sat) @ IC/IB = 10
TJ = 25°C
VBE @ VCE = 2.0 V
2.8
1.6
1.2
2.4
0
0.8
0.4
0.2
0.5
2.0
20
10
1.0
5.0
VBE(sat) = IC/IB = 10
2.0
相关PDF资料 |
PDF描述 |
|---|---|
| MJB6488T4 | 15 A, 80 V, NPN, Si, POWER TRANSISTOR |
| MJB6491T4 | 15 A, 80 V, PNP, Si, POWER TRANSISTOR |
| MJB6491 | 15 A, 80 V, PNP, Si, POWER TRANSISTOR |
| MJD112-001G | 2 A, 100 V, NPN, Si, POWER TRANSISTOR |
| MJD112-BP | 2000 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MJB-88 | 制造商:Maxconn 功能描述: |
| MJC19-5-A | 制造商:Ruland 功能描述:19MM J/COUPLING C/S 5MM |
| MJC19-8-A | 制造商:Ruland 功能描述:19MM J/COUPLING C/S 8MM |
| MJC2026-1BM | 制造商:Micrel Inc 功能描述: |
| MJC25-10-A | 制造商:Ruland 功能描述:25MM J/COUPLING C/S 10MM |
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