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参数资料
| 型号： | MJB6491 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 功率晶体管 |
| 英文描述： | 15 A, 80 V, PNP, Si, POWER TRANSISTOR |
| 封装： | CASE 418B-04, D2PAK-3 |
| 文件页数： | 2/4页 |
| 文件大小： | 91K |
| 代理商： | MJB6491 |
MJB6488, MJB6491
http://onsemi.com
401
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Sustaining Voltage (Note 1)
(IC = 200 mAdc, IB = 0)
VCEO(sus)
80
Vdc
CollectorEmitter Sustaining Voltage (Note 1)
(IC = 200 mAdc, VBE = 1.5 Vdc)
VCEX
90
Vdc
Collector Cutoff Current
(VCE = 40 Vdc, IB = 0)
ICEO
1.0
mAdc
Collector Cutoff Current
(VCE = 85 Vdc, VEB(off) = 1.5 Vdc)
(VCE = 80 Vdc, VEB(off) = 1.5 Vdc, TC = 150°C)
ICEX
100
5.0
mAdc
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
IEBO
10
mA
ON CHARACTERISTICS
DC Current Gain
(IC = 5.0 Adc, VCE = 4.0 Vdc)
(IC = 15 Adc, VCE = 4.0 Vdc)
hFE
20
5.0
150
CollectorEmitter Saturation Voltage
(IC = 5.0 Adc, IB = 0.5 Adc)
(IC = 15 Adc, IB = 5.0 Adc)
VCE(sat)
1.3
3.5
Vdc
BaseEmitter On Voltage
(IC = 5.0 Adc, VCE = 4.0 Vdc)
(IC = 15 Adc, VCE = 4.0 Vdc)
VBE(on)
1.3
3.5
Vdc
DYNAMIC CHARACTERISTICS
CurrentGain Bandwidth Product (Note 2) (IC = 1.0 Adc, VCE = 4.0 Vdc, ftest = 1.0 MHz)
fT
5.0
MHz
SmallSignal Current Gain
(IC = 1.0 Adc, VCE = 4.0 Vdc, f = 1.0 kHz)
hfe
25
1. Pulse Test: Pulse Width
v 300 ms, Duty Cycle v 2.0%.
2. fT = |hfe| ftest.
C,
CAP
ACIT
ANCE
(pF)
300
VR, REVERSE VOLTAGE (V)
1.0
2.0
5.0
20
10
200
100
70
50
Cib
Cob
50
0.5
Figure 21. TurnOff Time
IC, COLLECTOR CURRENT (A)
t,
TIME
(ns)
0.2
5.0
1.0
2.0
20
VCC = 30 V
IC/IB = 10
IB1 = IB2
TJ = 25°C
ts
0.5
tf
5000
100
200
1000
500
50
NPN
PNP
10
Figure 22. Capacitances
Cob
NPN
PNP
700
1000
TJ = 25°C
80
40
20
0
20
40
80
100
120
160
Figure 23. Power Derating
TC, CASE TEMPERATURE (°C)
P
D
,POWER
DISSIP
A
TION
(W
A
TTS)
60
TA TC
4.0
2.0
1.0
3.0
0
60
140
TA
TC
0
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