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参数资料
| 型号： | MJD1222 |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 3000 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | IPAK-3 |
| 文件页数： | 1/4页 |
| 文件大小： | 0K |
| 代理商： | MJD1222 |
2001 Fairchild Semiconductor Corporation
Rev. A2, June 2001
MJD122
2
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings T
C=25°C unless otherwise noted
Electrical Characteristics T
C=25°C unless otherwise noted
* Pulse Test: PW
≤ 300ms, Duty Cycle ≤ 2%
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage
40
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current
3
A
IB
Base Current
0.3
A
PC
Collector Dissipation (TC=25°C)
15
W
Collector Dissipation (Ta=25°C)
1
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
- 55 ~ 150
°C
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
BVCEO
*Collector-Emitter Breakdown Voltage
IC = 25mA, IB = 0
40
V
ICBO
Collector Cut-off Current
VCB = 60V, IE = 0
20
A
IEBO
Emitter Cut-off Current
VEB = 5V, IC = 0
2.5
mA
hFE1
hFE2
*DC Current Gain
VCE = 2V, IC = 1A
VCE = 2V, IC = 3A
2000
1000
VCE(sat)
*Collector-Emitter Saturation Voltage
IC = 2A, IB = 4mA
1.5
V
VBE(sat)
*Base-Emitter Saturation Voltage
IC = 2A, IB = 4mA
2
V
tON
Turn ON Time
VCC = 30V, IC = 3A
IB1 = -IB2 = 6mA
RL = 10
0.1
s
tSTG
Storage Time
1
s
tF
Fall Time
0.2
s
MJD1222
Power Amplifier Applications
High DC Current Gain
Low Collector-Emitter Saturation Voltage
Built in a Damper Diode at E-C
Darlington TR
Complement to MJD907
1. Base 2. Collector 3. Emitter
I-PAK
1
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MJD122G | 功能描述:达林顿晶体管 8A 100V Bipolar Power NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| MJD122G | 制造商:ON Semiconductor 功能描述:TRANSISTOR DARLINGTON 100V 8A D-PAK 制造商:ON Semiconductor 功能描述:TRANSISTOR, DARLINGTON, 100V, 8A, D-PAK 制造商:ON Semiconductor 功能描述:TRANSISTOR, DARLINGTON, 100V, 8A, D-PAK, Transistor Polarity:NPN, Collector Emit |
| MJD122T4 | 功能描述:达林顿晶体管 NPN Power Darlington RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| MJD122T4G | 功能描述:达林顿晶体管 8A 100V Bipolar Power NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| MJD122T4G | 制造商:ON Semiconductor 功能描述:DARLINGTON TRANSISTOR NPN 100V D-PAK |
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