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参数资料
| 型号： | MJD340 |
| 厂商： | STMICROELECTRONICS |
| 元件分类： | 功率晶体管 |
| 英文描述： | 0.5 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-252 |
| 文件页数： | 5/5页 |
| 文件大小： | 503K |
| 代理商： | MJD340 |
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MJD340 / MJD350
5/5
相关PDF资料 |
PDF描述 |
|---|---|
| MJD41C-I | 6 A, 100 V, NPN, Si, POWER TRANSISTOR |
| MJD42-I | 6 A, 100 V, PNP, Si, POWER TRANSISTOR |
| MJD42C-I | 6 A, 100 V, PNP, Si, POWER TRANSISTOR |
| MJD42CI | 6 A, 100 V, PNP, Si, POWER TRANSISTOR |
| MJD44H11I | 8 A, 80 V, NPN, Si, POWER TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MJD340_03 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:COMPLEMENTARY SILICON POWER TRANSISTORS |
| MJD340_11 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:High Voltage Power Transistors |
| MJD340-1 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:SILICON POWER TRANSISTORS 0.5 AMPERE 300 VOLTS 15 WATTS |
| MJD340-13 | 功能描述:两极晶体管 - BJT HIGH VOLTAGE NPN SMT RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJD340G | 功能描述:两极晶体管 - BJT 0.5A 300V 15W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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