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参数资料
型号： MJD350-1
厂商： ON SEMICONDUCTOR
元件分类： 功率晶体管
英文描述： 0.5 A, 300 V, PNP, Si, POWER TRANSISTOR
封装： CASE 369-07, 3 PIN
文件页数： 1/8页
文件大小： 98K
代理商： MJD350-1
High Voltage Power Transistors
DPAK For Surface Mount Applications
Designed for line operated audio output amplifier, switchmode
power supply drivers and other switching applications.
Lead Formed for Surface Mount Applications in Plastic Sleeves (No
Suffix)
Straight Lead Version in Plastic Sleeves (“–1” Suffix)
Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix)
Electrically Similar to Popular MJE340 and MJE350
300 V (Min) — V
CEO(sus)
0.5 A Rated Collector Current
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
300
Vdc
Collector–Base Voltage
VCB
300
Vdc
Emitter–Base Voltage
VEB
3
Vdc
Collector Current — Continuous
— Peak
IC
0.5
0.75
Adc
Total Power Dissipation @ TC = 25_C
Derate above 25
_C
PD
15
0.12
Watts
W/
_C
Total Power Dissipation* @ TA = 25_C
Derate above 25
_C
PD
1.56
0.012
Watts
W/
_C
Operating and Storage Junction
Temperature Range
TJ, Tstg
–65 to +150
_C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RθJC
8.33
_C/W
Thermal Resistance, Junction to Ambient*
RθJA
80
_C/W
Lead Temperature for Soldering Purpose
TL
260
_C
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (1)
(IC = 1 mAdc, IB = 0)
VCEO(sus)
300
—
Vdc
Collector Cutoff Current (VCB = 300 Vdc, IE =
0)
ICBO
—
0.1
mAdc
Emitter Cutoff Current (VBE = 3 Vdc, IC = 0)
IEBO
—
0.1
mAdc
ON CHARACTERISTICS (1)
DC Current Gain (IC = 50 mAdc, VCE = 10 Vdc)
hFE
30
240
—
*When surface mounted on minimum pad sizes recommended.
(1) Pulse Test: Pulse Width
v 300 s, Duty Cycle v 2%.
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
ON Semiconductort
Semiconductor Components Industries, LLC, 2001
November, 2001 – Rev. 3
1
Publication Order Number:
MJD340/D
SILICON
POWER TRANSISTORS
0.5 AMPERE
300 VOLTS
15 WATTS
*ON Semiconductor Preferred Device
MJD340
MJD350
MINIMUM PAD SIZES
RECOMMENDED FOR
SURFACE MOUNTED
APPLICATIONS
*
NPN
PNP
*
CASE 369A–13
CASE 369–07
0.243 6.172
0.063 1.6
0.1
18
3.0
0.100 2.54
0.165 4.191
0.190 4.826
inches
mm
相关PDF资料
PDF描述
MJD340-1 0.5 A, 300 V, NPN, Si, POWER TRANSISTOR
MJD350I 0.5 A, 300 V, PNP, Si, POWER TRANSISTOR
MJD350 0.5 A, 300 V, PNP, Si, POWER TRANSISTOR, TO-252
MJD340T4 0.5 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-252AA
MJD340 0.5 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-252
相关代理商/技术参数
参数描述
MJD350-13 功能描述:两极晶体管 - BJT HIGH VOLTAGE PNP SMT RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
MJD350G 功能描述:两极晶体管 - BJT 0.5A 300V 15W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
MJD350T4 功能描述:两极晶体管 - BJT PNP Gen Pur Switch RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
MJD350T4G 功能描述:两极晶体管 - BJT 0.5A 300V 15W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
MJD350TF 功能描述:两极晶体管 - BJT PNP Epitaxial Sil RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
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