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参数资料
| 型号： | MJD44H11 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 功率晶体管 |
| 英文描述： | Complementary Power Transistors(互补型功率晶体管) |
| 中文描述： | 8 A, 80 V, NPN, Si, POWER TRANSISTOR |
| 封装： | PLASTIC, CASE 369C-01, DPAK-3 |
| 文件页数： | 6/7页 |
| 文件大小： | 76K |
| 代理商： | MJD44H11 |
MJD44H11 (NPN) MJD45H11 (PNP)
http://onsemi.com
6
PACKAGE DIMENSIONS
DPAK
CASE 369C
ISSUE O
D
A
K
B
R
V
S
F
L
G
2 PL
M
0.13 (0.005)
T
E
C
U
J
H
T
SEATING
Z
DIM
A
B
C
D
E
F
G
H
J
K
L
R
S
U
V
Z
MIN
0.235
0.250
0.086
0.027
0.018
0.037
0.180 BSC
0.034
0.018
0.102
0.090 BSC
0.180
0.025
0.020
0.035
0.155
MAX
0.245
0.265
0.094
0.035
0.023
0.045
MIN
5.97
6.35
2.19
0.69
0.46
0.94
4.58 BSC
0.87
0.46
2.60
2.29 BSC
4.57
0.63
0.51
0.89
3.93
MAX
6.22
6.73
2.38
0.88
0.58
1.14
MILLIMETERS
INCHES
0.040
0.023
0.114
1.01
0.58
2.89
0.215
0.040
0.050
5.45
1.01
1.27
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
1
2
3
4
5.80
0.228
2.58
0.101
1.6
0.063
6.20
0.244
3.0
0.118
6.172
0.243
mm
inches
SCALE 3:1
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
相关PDF资料 |
PDF描述 |
|---|---|
| MJD45H11 | Complementary Power Transistors(互补功率晶体管) |
| MJD50 | High Voltage Power Transistors(高电压功率晶体管) |
| MJE170 | Complementary Plastic Silicon Power Transistors(互补型硅功率晶体管) |
| MJE180 | Complementary Plastic Silicon Power Transistors(互补型硅功率晶体管) |
| MJE253 | Complementary Silicon Power Plastic Transistors(互补型硅功率晶体管) |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MJD44H11_03 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:COMPLEMENTARY SILICON PNP TRANSISTORS |
| MJD44H11_06 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Complementary Power Transistors |
| MJD44H11_09 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:Complementary power transistors |
| MJD44H11_11 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Complementary Power Transistors |
| MJD44H11-001 | 功能描述:两极晶体管 - BJT 8A 80V 20W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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