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参数资料
| 型号： | MJE13001-B-T92-K |
| 厂商： | UNISONIC TECHNOLOGIES CO LTD |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 200 mA, 400 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封装： | TO-92, 3 PIN |
| 文件页数： | 2/3页 |
| 文件大小： | 169K |
| 代理商： | MJE13001-B-T92-K |
MJE13001
NPN SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R201-055.E
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Emitter Voltage
VCEO
400
V
Collector-Base Voltage
VCBO
600
V
Emitter Base Voltage
VEBO
7
V
Collector Current
IC
200
mA
Collector Power Dissipation
PC
750
mW
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
Collector-Base Breakdown Voltage
BVCBO
IC=100 μA, IE=0
600
V
Collector-Emitter Breakdown Voltage
BVCEO
IC=1mA, IB=0
400
V
Emitter-Base Breakdown Voltage
BVEBO
IE=100 μA, IC=0
7
V
Base-Emitter Voltage
VBE
IE=100 mA
1.1
V
Collector Cutoff Cut-Off Current
ICBO
VCB=600V,IE=0A
100
μA
Collector Emitter Cut-Off Current
ICEO
VCE=400V, IB=0
200
μA
Emitter Cutoff Cut-Off Current
IEBO
VEB=7V, IC=0A
100
μA
ON CHARACTERISTICS
hFE1
*
VCE=20 V, IC=20mA
10
70
DC Current Gain
hFE2
VCE=10V, IC=0.25mA
5
Collector-Emitter Saturation Voltage
VCE(SAT)
IC=50mA, IB=10mA
0.5
V
Base-Emitter Saturation Voltage
VBE(SAT)
IC=50mA, IB=10mA
1.2
V
SMALL-SIGNAL CHARACTERISTICS
Current Gain Bandwidth Product
fT
IC=20mA, VCE=20V, f=1MHz
8
MHz
Resistive Load
Storage Time
tS
1.5
μs
Fall Time
tF
IC=50mA, IB1=-IB2=5mA, VCC=45V
0.3
μs
CLASSIFICATION OF hFE1*
RANK
A
B
C
D
E
F
G
H
I
J
K
L
RANGE 10-15
15-20
20-25
25-30
30-35
35-40
40-45
45-50
50-55
55-60
60-65
65-70
相关PDF资料 |
PDF描述 |
|---|---|
| MJE13001-E-T92-K | 200 mA, 400 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| MJE13001G-I-T92-K | 200 mA, 400 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| MJE13001-K-T92-K | 200 mA, 400 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| MJE13001G-G-T92-K | 200 mA, 400 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| MJE13001L-D-T92-B | 200 mA, 400 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MJE13001G-X-X-AB3-A-R | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:NPN SILICON POWER TRANSISTOR |
| MJE13001G-X-X-AB3-F-R | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:NPN SILICON POWER TRANSISTOR |
| MJE13001G-X-X-T92-B | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:NPN SILICON POWER TRANSISTOR |
| MJE13001G-X-X-T92-K | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:NPN SILICON POWER TRANSISTOR |
| MJE13001-X-X-AB3-A -R | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:NPN SILICON POWER TRANSISTOR |
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