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参数资料
| 型号： | MJE13001 |
| 厂商： | MICRO COMMERCIAL COMPONENTS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 200 mA, 400 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封装： | PLASTIC PACKAGE-3 |
| 文件页数： | 1/3页 |
| 文件大小： | 0K |
| 代理商： | MJE13001 |
MJE13001
NPN Silicon
Plastic-Encapsulate
Transistor
Features
Capable of 1.0Watts of Power Dissipation.
Collector-current 0.2A
Collector-base Voltage 600V
Operating and storage junction temperature range: -55
OC to +150OC
Electrical Characteristics @ 25
OC Unless Otherwise Specified
Symbol
Parameter
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage
(IC=1.0mAdc, IB=0)
400
Vdc
V(BR)CBO
Collector-Base Breakdown Voltage
(IC=100uAdc, IE=0)
600
Vdc
V(BR)EBO
Emitter-Base Breakdown Voltage
(IE=100uAdc, IC=0)
7.0
Vdc
ICBO
Collector Cutoff Current
(VCB=600Vdc, IE=0)
100
uAdc
ICEO
Collector Cutoff Current
(VCE=400Vdc,IB=0)
200
uAdc
IEBO
Emitter Cutoff Current
(VEB=7.0Vdc, IC=0)
100
uAdc
ON CHARACTERISTICS
hFE(1)
DC Current Gain
(IC=20mAdc, VCE=20Vdc)
10
40
hFE(2)
DC Current Gain
(IC=0.25mAdc, VCE=10Vdc)
5.0
VCE(sat)
Collector-Emitter Saturation Voltage
(IC=50mAdc, IB=10mAdc)
0.5
Vdc
VBE(sat)
Base-Emitter Saturation Voltage
(IC=50mAdc, IB=10mAdc)
1.2
Vdc
VBE
Base-Emitter Voltage
(IE=100mAdc)
1.1
Vdc
SMALL-SIGNAL CHARACTERISTICS
fT
Trans istor Frequency
(IC=20mAdc, VCE=20Vdc, f=1.0MHz)
8.0
MHz
tF
Fall Time
0.3
uS
tS
Storage Time
VCC=45V,IC=50mA
IB1=IB2=5.0mA
1.5
uS
TO-92
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
.175
.185
4.45
4.70
B
.175
.185
4.46
4.70
C
.500
---
12.7
---
D
.016
.020
0.41
0.63
E
.135
.145
3.43
3.68
G
.095
.105
2.42
2.67
AE
B
C
D
G
omponents
20736 Marilla Street Chatsworth
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MCC
Revision:
3
200
7/09/19
1
2
3
1.BASE
3.EMITTER
2.COLLECTOR
TM
Micro Commercial Components
www.mccsemi.com
1 of 3
Case Material: Molded Plastic.
UL Flammability
Classification Rating 94V-0
Marking: 13001
相关PDF资料 |
PDF描述 |
|---|---|
| MJE13001P | 200 mA, 400 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| MJE13002F | 1.5 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-126 |
| MJE13002 | 1.5 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-126 |
| MJE13002A | 1.5 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-126 |
| MJE13002C | 1.5 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-126 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MJE13001_11 | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:NPN SILICON POWER TRANSISTOR |
| MJE13001G-X-X-AB3-A-R | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:NPN SILICON POWER TRANSISTOR |
| MJE13001G-X-X-AB3-F-R | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:NPN SILICON POWER TRANSISTOR |
| MJE13001G-X-X-T92-B | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:NPN SILICON POWER TRANSISTOR |
| MJE13001G-X-X-T92-K | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:NPN SILICON POWER TRANSISTOR |
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