- 您现在的位置：买卖IC网 > PDF目录95949 > MJE13002B (MICRO COMMERCIAL COMPONENTS) 800 mA, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 PDF资料下载
参数资料
| 型号： | MJE13002B |
| 厂商： | MICRO COMMERCIAL COMPONENTS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 800 mA, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封装： | PLASTIC PACKAGE-3 |
| 文件页数： | 1/2页 |
| 文件大小： | 1130K |
| 代理商： | MJE13002B |
MJE13002B
NPN Silicon
Plastic-Encapsulate
Transistor
Features
Capable of 900mWatts of Power Dissipation.
Collector-current 0.8A
Collector-base Voltage 600V
Operating and storage junction temperature range: -55
OC to +150OC
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage
(IC=1.0mAdc, IB=0)
400
Vdc
V(BR)CBO
Collector-Base Breakdown Voltage
(IC=100uAdc, IE=0)
600
Vdc
V(BR)EBO
Emitter-Base Breakdown Voltage
(IE=100uAdc, IC=0)
6.0
Vdc
ICBO
Collector Cutoff Current
(VCB=600Vdc, IE=0)
100
uAdc
IEBO
Emitter Cutoff Current
(VEB=6.0Vdc, IC=0)
100
uAdc
ON CHARACTERISTICS
hFE(1)
DC Current Gain
(IC=10mAdc, VCE=10Vdc)
6
hFE(2)
DC Current Gain
(IC=200mAdc, VCE=10Vdc)
9.0
40
VCE(sat)
Collector-Emitter Saturation Voltage
(IC=200mAdc, IB=40mAdc)
0.5
Vdc
VBE(sat)
Base-Emitter Saturation Voltage
(IC=200mAdc, IB=40mAdc)
1.1
Vdc
SMALL-SIGNAL CHARACTERISTICS
fT
Transistor Frequency
(IC=100mAdc, VCE=10Vdc, f=1.0MHz)
5.0
MHz
tF
Fall Time
0.5
uS
tS
Storage Time
VCC=100V,IC=1.0A,
IB1=IB2=0.2A
2.5
uS
omponents
20736 Marilla Street Chatsworth
!"#
$% !"#
MCC
Revision: 2
2006/05/17
TM
Micro Commercial Components
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
.175
.185
4.45
4.70
B
.175
.185
4.46
4.70
C
.500
---
12.7
---
D
.016
.020
0.41
0.63
E
.135
.145
3.43
3.68
G
.095
.105
2.42
2.67
A
E
B
C
D
G
1 2
3
1.BASE
3.EMITTER
2.
COLLECTOR
TO-92
www.mccsemi.com
1 of 2
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
相关PDF资料 |
PDF描述 |
|---|---|
| MJE13003A | 1.5 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-126 |
| MJE13003B | 1 mA, 400 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| MJE13003Y | 1.5 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-126 |
| MJE13005-DR6269 | 4 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| MJE13004-6200 | 4 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MJE13003 | 功能描述:两极晶体管 - BJT BIP NPN 2A 400V RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJE13003_06 | 制造商:KEC 制造商全称:KEC(Korea Electronics) 功能描述:TO-126 PACKAGE |
| MJE13003_09 | 制造商:KEC 制造商全称:KEC(Korea Electronics) 功能描述:TRIPLE DIFFUSED NPN TRANSISTOR |
| MJE13003_12 | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:NPN SILICON POWER TRANSISTOR |
| MJE13003A | 制造商:未知厂家 制造商全称:未知厂家 功能描述:MJE SERIES TRANSISTORS |
发布紧急采购，3分钟左右您将得到回复。