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参数资料
| 型号： | MJE13005-TQ3-R |
| 厂商： | UNISONIC TECHNOLOGIES CO LTD |
| 元件分类： | 功率晶体管 |
| 英文描述： | 4 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-263AB |
| 封装： | TO-263, 3 PIN |
| 文件页数： | 1/8页 |
| 文件大小： | 407K |
| 代理商： | MJE13005-TQ3-R |
UNISONIC TECHNOLOGIES CO., LTD
MJE13005
NPN SILICON TRANSISTOR
www.unisonic.com.tw
1 of 8
Copyright 2008 Unisonic Technologies Co., Ltd
QW-R203-018,F
NPN SILICON POWER
TRANSISTORS
DESCRIPTION
These devices are designed for high-voltage, high-speed
power switching inductive circuits where fall time is critical.
They are particularly suited for 115 and 220 V SWITCHMODE.
FEATURES
* VCEO(SUS)= 400 V
* Reverse bias SOA with inductive loads @ TC = 100°С
* Inductive switching matrix 2 to 4 Amp, 25 and 100°С
. . . tc @ 3A, 100°С is 180 ns (Typ)
* 700V blocking capability
* SOA and switching applications information
APPLICATIONS
* Switching regulator’s, inverters
* Motor controls
* Solenoid/Relay drivers
* Deflection circuits
TO-220
TO-220F
1
TO-263
1
TO-126
1
*Pb-free plating product number: MJE13005L
ORDERING INFORMATION
Ordering Number
Pin Assignment
Normal
Lead Free Plating
Package
1
2
3
Packing
MJE13005-T60-K
MJE13005L-T60-K
TO-126
B
C
E
Bulk
MJE13005-TA3-T
MJE13005L-TA3-T
TO-220
B
C
E
Tube
MJE13005-TF3-T
MJE13005L-TF3-T
TO-220F
B
C
E
Tube
MJE13005-TQ3-R
MJE13005L-TQ3-R
TO-263
B
C
E
Tape Reel
MJE13005-TQ3-T
MJE13005L-TQ3-T
TO-263
B
C
E
Tube
相关PDF资料 |
PDF描述 |
|---|---|
| MJE13005-T60-K | 4 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-126 |
| MJE13005L-T60-K | 4 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-126 |
| MJE13005L-TQ3-R | 4 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-263AB |
| MJE13005 | 4 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| MJE13005 | 4 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MJE13006 | 制造商:NTE Electronics 功能描述:T-NPN SI- HIV SW |
| MJE13006_13007 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:High Voltage Switch Mode Application |
| MJE13007 | 功能描述:两极晶体管 - BJT 8A 400V 80W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJE13007_06 | 制造商:KEC 制造商全称:KEC(Korea Electronics) 功能描述:TO-220AB PACKAGE |
| MJE13007_08 | 制造商:KEC 制造商全称:KEC(Korea Electronics) 功能描述:TRIPLE DIFFUSED NPN TRANSISTOR |
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