- 您现在的位置：买卖IC网 > PDF目录98015 > MJE13005BC (ON SEMICONDUCTOR) 4 A, 400 V, NPN, Si, POWER TRANSISTOR PDF资料下载
参数资料
| 型号： | MJE13005BC |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 功率晶体管 |
| 英文描述： | 4 A, 400 V, NPN, Si, POWER TRANSISTOR |
| 封装： | PLASTIC, TO-220AB, 3 PIN |
| 文件页数： | 1/63页 |
| 文件大小： | 453K |
| 代理商： | MJE13005BC |
当前第1页第2页第3页第4页第5页第6页第7页第8页第9页第10页第11页第12页第13页第14页第15页第16页第17页第18页第19页第20页第21页第22页第23页第24页第25页第26页第27页第28页第29页第30页第31页第32页第33页第34页第35页第36页第37页第38页第39页第40页第41页第42页第43页第44页第45页第46页第47页第48页第49页第50页第51页第52页第53页第54页第55页第56页第57页第58页第59页第60页第61页第62页第63页
3–661
Motorola Bipolar Power Transistor Device Data
Designer's Data Sheet
SWITCHMODE Series
NPN Silicon Power Transistors
These devices are designed for high–voltage, high–speed power switching
inductive circuits where fall time is critical. They are particularly suited for 115 and
220 V SWITCHMODE applications such as Switching Regulator’s, Inverters, Motor
Controls, Solenoid/Relay drivers and Deflection circuits.
SPECIFICATION FEATURES:
VCEO(sus) 400 V
Reverse Bias SOA with Inductive Loads @ TC = 100_C
Inductive Switching Matrix 2 to 4 Amp, 25 and 100_C
...tc @ 3A, 100_C is 180 ns (Typ)
700 V Blocking Capability
SOA and Switching Applications Information.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO(sus)
400
Vdc
Collector–Emitter Voltage
VCEV
700
Vdc
Emitter Base Voltage
VEBO
9
Vdc
Collector Current — Continuous
— Peak (1)
IC
ICM
4
8
Adc
Base Current — Continuous
— Peak (1)
IB
IBM
2
4
Adc
Emitter Current — Continuous
— Peak (1)
IE
IEM
6
12
Adc
Total Power Dissipation @ TA = 25_C
Derate above 25
_C
PD
2
16
Watts
mW/
_C
Total Power Dissipation @ TC = 25_C
Derate above 25
_C
PD
75
600
Watts
mW/
_C
Operating and Storage Junction Temperature Range
TJ, Tstg
– 65 to + 150
_C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
R
θJA
62.5
_C/W
Thermal Resistance, Junction to Case
R
θJC
1.67
_C/W
Maximum Lead Temperature for Soldering
Purposes: 1/8
″ from Case for 5 Seconds
TL
275
_C
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle
v 10%.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred devices are Motorola recommended choices for future use and best overall value.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MJE13005
4 AMPERE
NPN SILICON
POWER TRANSISTOR
400 VOLTS
75 WATTS
*Motorola Preferred Device
*
CASE 221A–06
TO–220AB
REV 3
相关PDF资料 |
PDF描述 |
|---|---|
| MJE13005DW | 4 A, 400 V, NPN, Si, POWER TRANSISTOR |
| MJE13005BV | 4 A, 400 V, NPN, Si, POWER TRANSISTOR |
| MJE13007DW | 8 A, 400 V, NPN, Si, POWER TRANSISTOR |
| MJE13007BU | 8 A, 400 V, NPN, Si, POWER TRANSISTOR |
| MJE13007BC | 8 A, 400 V, NPN, Si, POWER TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MJE13005D | 制造商:KEC 制造商全称:KEC(Korea Electronics) 功能描述:TRIPLE DIFFUSED NPN TRANSISTOR |
| MJE13005D_09 | 制造商:KEC 制造商全称:KEC(Korea Electronics) 功能描述:TRIPLE DIFFUSED NPN TRANSISTOR |
| MJE13005D_12 | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
| MJE13005DG-TA3-T | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
| MJE13005DL-TA3-T | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
发布紧急采购，3分钟左右您将得到回复。