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参数资料
| 型号： | MJE13007AN |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 功率晶体管 |
| 英文描述： | 8 A, 400 V, NPN, Si, POWER TRANSISTOR |
| 封装： | PLASTIC, TO-220AB, 3 PIN |
| 文件页数： | 1/66页 |
| 文件大小： | 462K |
| 代理商： | MJE13007AN |
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3–667
Motorola Bipolar Power Transistor Device Data
Designer's Data Sheet
SWITCHMODE
NPN Bipolar Power Transistor
For Switching Power Supply Applications
The MJE/MJF13007 is designed for high–voltage, high–speed power switching
inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V
switchmode applications such as Switching Regulators, Inverters, Motor Controls,
Solenoid/Relay drivers and Deflection circuits.
VCEO(sus) 400 V
Reverse Bias SOA with Inductive Loads @ TC = 100°C
700 V Blocking Capability
SOA and Switching Applications Information
Two Package Choices: Standard TO–220 or Isolated TO–220
MJF13007 is UL Recognized to 3500 VRMS, File #E69369
MAXIMUM RATINGS
Rating
Symbol
MJE13007
MJF13007
Unit
Collector–Emitter Sustaining Voltage
VCEO
400
Vdc
Collector–Emitter Breakdown Voltage
VCES
700
Vdc
Emitter–Base Voltage
VEBO
9.0
Vdc
Collector Current — Continuous
Collector Current — Peak (1)
IC
ICM
8.0
16
Adc
Base Current — Continuous
Base Current — Peak (1)
IB
IBM
4.0
8.0
Adc
Emitter Current — Continuous
Emitter Current — Peak (1)
IE
IEM
12
24
Adc
RMS Isolation Voltage
(for 1 sec, R.H. < 30%, TA = 25°C)
Test No. 1 Per Fig. 15
Test No. 2 Per Fig. 16
Test No. 3 Per Fig. 17
Proper strike and creepage distance must
be provided
VISOL
—
4500
3500
1500
V
Total Device Dissipation @ TC = 25°C
Derate above 25
°C
PD
80
0.64
40*
0.32
Watts
W/
°C
Operating and Storage Temperature
TJ, Tstg
– 65 to 150
°C
THERMAL CHARACTERISTICS
Thermal Resistance
— Junction to Case
— Junction to Ambient
R
θJC
R
θJA
°1.56°
°62.5°
°3.12°
°62.5°
°C/W
Maximum Lead Temperature for Soldering
Purposes: 1/8
″ from Case for 5 Seconds
TL
260
°C
(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle
≤ 10%.
*Measurement made with thermocouple contacting the bottom insulated mountign surface of the
*package (in a location beneath the die), the device mounted on a heatsink with thermal grease applied
*at a mounting torque of 6 to 8
lbs.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MJE13007
MJF13007
POWER TRANSISTOR
8.0 AMPERES
400 VOLTS
80/40 WATTS
CASE 221A–06
TO–220AB
MJE13007
CASE 221D–02
ISOLATED TO–220 TYPE
UL RECOGNIZED
MJF13007
相关PDF资料 |
PDF描述 |
|---|---|
| MJE13007AS | 8 A, 400 V, NPN, Si, POWER TRANSISTOR |
| MJE13007AK | 8 A, 400 V, NPN, Si, POWER TRANSISTOR |
| MJE13007BG | 8 A, 400 V, NPN, Si, POWER TRANSISTOR |
| MJE13007BD | 8 A, 400 V, NPN, Si, POWER TRANSISTOR |
| MJE13007AF | 8 A, 400 V, NPN, Si, POWER TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MJE13007D | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS |
| MJE13007DG-TA3-T | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS |
| MJE13007DL-TA3-T | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS |
| MJE13007F | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:High Voltage Switch Mode Application |
| MJE13007F_05 | 制造商:KEC 制造商全称:KEC(Korea Electronics) 功能描述:TO-220IS PACKAGE |
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