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参数资料
| 型号： | MJE1320BV |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 功率晶体管 |
| 英文描述： | 2 A, 900 V, NPN, Si, POWER TRANSISTOR |
| 封装： | PLASTIC, TO-220AB, 3 PIN |
| 文件页数： | 1/63页 |
| 文件大小： | 434K |
| 代理商： | MJE1320BV |
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3–620
Motorola Bipolar Power Transistor Device Data
Designer's Data Sheet
NPN Silicon Power Transistor
Switchmode Series
This transistor is designed for high–voltage, power switching in inductive circuits
where RBSOA and breakdown voltage are critical. They are particularly suited for
line–operated switchmode applications.
Typical Applications:
Fluorescent Lamp Ballasts
Inverters
Solenoid and Relay Drivers
Motor Controls
Deflection Circuits
Features:
High VCEV Capability (1800 Volts)
Low Saturation Voltage
100_C Performance Specified for:
Reverse–Biased SOA with Inductive Loads
Switching Times with Inductive Loads
Saturation Voltages
Leakage Currents
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO(sus)
900
Vdc
Collector–Emitter Voltage
VCEV
1800
Vdc
Emitter Base Voltage
VEB
9
Vdc
Collector Current — Continuous
Peak(1)
IC
ICM
2
5
Adc
Base Current — Continuous
Peak(1)
IB
IBM
1.5
2.5
Adc
Total Power Dissipation @ TC = 25_C
@ TC = 100_C
Derate above 25
_C
PD
80
32
0.64
Watts
W/
_C
Operating and Storage Junction Temperature Range
TJ, Tstg
– 65 to + 150
_C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θJC
1.56
_C/W
Maximum Lead Temperature for Soldering
Purposes: 1/8
″ from Case for 5 Seconds
TL
275
_C
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle
v 10%.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MJE1320
POWER TRANSISTOR
2 AMPERES
900 VOLTS
80 WATTS
CASE 221A–06
TO–220AB
相关PDF资料 |
PDF描述 |
|---|---|
| MJE1320BA | 2 A, 900 V, NPN, Si, POWER TRANSISTOR |
| MJE1320AN | 2 A, 900 V, NPN, Si, POWER TRANSISTOR |
| MJE1320AJ | 2 A, 900 V, NPN, Si, POWER TRANSISTOR |
| MJE1320BC | 2 A, 900 V, NPN, Si, POWER TRANSISTOR |
| MJE1320BU | 2 A, 900 V, NPN, Si, POWER TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MJE15028 | 功能描述:两极晶体管 - BJT 8A 120V 50W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJE15028_06 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:8 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 120−150 VOLTS, 50 WATTS |
| MJE15028G | 功能描述:两极晶体管 - BJT 8A 120V 50W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJE15029 | 功能描述:两极晶体管 - BJT 8A 120V 50W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJE15029 | 制造商:SPC Multicomp 功能描述:BIPOLAR TRANSISTOR PNP -120V TO-220 制造商:SPC Multicomp 功能描述:BIPOLAR TRANSISTOR, PNP, -120V, TO-220 |
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