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参数资料
| 型号： | MJE18006AK |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 功率晶体管 |
| 英文描述： | 6 A, 450 V, NPN, Si, POWER TRANSISTOR |
| 封装： | PLASTIC, TO-220AB, 3 PIN |
| 文件页数： | 64/65页 |
| 文件大小： | 498K |
| 代理商： | MJE18006AK |
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MJE18006 MJF18006
3–741
Motorola Bipolar Power Transistor Device Data
MOUNTED
FULLY ISOLATED
PACKAGE
LEADS
HEATSINK
0.110
″ MIN
Figure 22a. Screw or Clip Mounting Position
for Isolation Test Number 1
* Measurement made between leads and heatsink with all leads shorted together
CLIP
MOUNTED
FULLY ISOLATED
PACKAGE
LEADS
HEATSINK
CLIP
0.107
″ MIN
MOUNTED
FULLY ISOLATED
PACKAGE
LEADS
HEATSINK
0.107
″ MIN
Figure 22b. Clip Mounting Position
for Isolation Test Number 2
Figure 22c. Screw Mounting Position
for Isolation Test Number 3
TEST CONDITIONS FOR ISOLATION TESTS*
4–40 SCREW
PLAIN WASHER
HEATSINK
COMPRESSION WASHER
NUT
CLIP
HEATSINK
Laboratory tests on a limited number of samples indicate, when using the screw and compression washer mounting technique, a screw
torque of 6 to 8 in . lbs is sufficient to provide maximum power dissipation capability. The compression washer helps to maintain a
constant pressure on the package over time and during large temperature excursions.
Destructive laboratory tests show that using a hex head 4–40 screw, without washers, and applying a torque in excess of 20 in . lbs will
cause the plastic to crack around the mounting hole, resulting in a loss of isolation capability.
Additional tests on slotted 4–40 screws indicate that the screw slot fails between 15 to 20 in . lbs without adversely affecting the pack-
age. However, in order to positively ensure the package integrity of the fully isolated device, Motorola does not recommend exceeding 10
in . lbs of mounting torque under any mounting conditions.
Figure 23. Typical Mounting Techniques
for Isolated Package
Figure 23a. Screw–Mounted
Figure 23b. Clip–Mounted
MOUNTING INFORMATION**
** For more information about mounting power semiconductors see Application Note AN1040.
相关PDF资料 |
PDF描述 |
|---|---|
| MJE18006AN | 6 A, 450 V, NPN, Si, POWER TRANSISTOR |
| MJE18006DW | 6 A, 450 V, NPN, Si, POWER TRANSISTOR |
| MJE18006BC | 6 A, 450 V, NPN, Si, POWER TRANSISTOR |
| MJE18006AF | 6 A, 450 V, NPN, Si, POWER TRANSISTOR |
| MJE18006BG | 6 A, 450 V, NPN, Si, POWER TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MJE18006G | 功能描述:两极晶体管 - BJT BIP NPN 8A 450V RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJE18008 | 功能描述:两极晶体管 - BJT 8A 450V 125W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJE18008G | 功能描述:两极晶体管 - BJT 8A 450V 125W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJE18009 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:POWER TRANSISTORS |
| MJE180G | 功能描述:两极晶体管 - BJT 3A 40V 12.5W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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