- 您现在的位置：买卖IC网 > PDF目录98019 > MJE18009AJ (ON SEMICONDUCTOR) 10 A, 450 V, NPN, Si, POWER TRANSISTOR PDF资料下载
参数资料
| 型号： | MJE18009AJ |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 功率晶体管 |
| 英文描述： | 10 A, 450 V, NPN, Si, POWER TRANSISTOR |
| 封装： | PLASTIC, TO-220AB, 3 PIN |
| 文件页数： | 1/66页 |
| 文件大小： | 512K |
| 代理商： | MJE18009AJ |
当前第1页第2页第3页第4页第5页第6页第7页第8页第9页第10页第11页第12页第13页第14页第15页第16页第17页第18页第19页第20页第21页第22页第23页第24页第25页第26页第27页第28页第29页第30页第31页第32页第33页第34页第35页第36页第37页第38页第39页第40页第41页第42页第43页第44页第45页第46页第47页第48页第49页第50页第51页第52页第53页第54页第55页第56页第57页第58页第59页第60页第61页第62页第63页第64页第65页第66页
3–750
Motorola Bipolar Power Transistor Device Data
Designer's Data Sheet
SWITCHMODE NPN Silicon
Planar Power Transistor
The MJE/MJF18009 has an application specific state–of–the–art die designed for
use in 220 V line–operated Switchmode Power supplies and electronic ballast (“light
ballast”). These high voltage/high speed transistors exhibit the following main
features:
Improved Efficiency Due to Low Base Drive Requirements:
— High and Flat DC Current Gain hFE
— Fast Switching
— No Coil Required in Base Circuit for Turn–Off (No Current Tail)
Full Characterization at 125_C
Motorola “6 SIGMA” Philosophy Provides Tight and Reproducible Parametric
Distributions
Specified Dynamic Saturation Data
Two Package Choices: Standard TO–220 or Isolated TO–220
MAXIMUM RATINGS
Rating
Symbol
MJE18009
MJF18009
Unit
Collector–Emitter Sustaining Voltage
VCEO
450
Vdc
Collector–Emitter Breakdown Voltage
VCES
1000
Vdc
Collector–Base Breakdown Voltage
VCBO
1000
Vdc
Emitter–Base Voltage
VEBO
9
Vdc
Collector Current — Continuous
— Peak (1)
IC
ICM
10
20
Adc
Base Current — Continuous
— Peak (1)
IB
IBM
4
8
Adc
*Total Device Dissipation @ TC = 25°C
*Derate above 25
_C
PD
150
1.2
50
0.4
Watt
W/
_C
Operating and Storage Temperature
TJ, Tstg
– 65 to 150
_C
RMS Isolation Voltage (2)
Per Figure 22
(1s, 25
°C, Humidity ≤ 30%)
Per Figure 23
TC = 25°C
Per Figure 24
VISOL1
VISOL2
VISOL3
4500
3500
1500
V
THERMAL CHARACTERISTICS
Rating
Symbol
MJE18009
MJF18009
Unit
Thermal Resistance — Junction to Case
— Junction to Ambient
R
θJC
R
θJA
0.83
62.5
2.5
62.5
_C/W
Maximum Lead Temperature for Soldering
Purposes: 1/8
″ from Case for 5 Seconds
TL
260
_C
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle
v 10%.
(2) Proper strike and creepage distance must be provided.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MJE18009
MJF18009
POWER TRANSISTORS
10 AMPERES
1000 VOLTS
50 and 150 WATTS
CASE 221A–06
TO–220AB
CASE 221D–02
TO–220 FULLPACK
相关PDF资料 |
PDF描述 |
|---|---|
| MJE18009AF | 10 A, 450 V, NPN, Si, POWER TRANSISTOR |
| MJE18009AS | 10 A, 450 V, NPN, Si, POWER TRANSISTOR |
| MJE18009BA | 10 A, 450 V, NPN, Si, POWER TRANSISTOR |
| MJE18009BD | 10 A, 450 V, NPN, Si, POWER TRANSISTOR |
| MJE18009BG | 10 A, 450 V, NPN, Si, POWER TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MJE180G | 功能描述:两极晶体管 - BJT 3A 40V 12.5W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJE180PWD | 功能描述:TRANSISTOR NPN 40V 3A RoHS:是 类别:分离式半导体产品 >> 晶体管(BJT) - 单路 系列:- 标准包装:1 系列:- 晶体管类型:NPN 电流 - 集电极 (Ic)（最大）:1A 电压 - 集电极发射极击穿（最大）:30V Ib、Ic条件下的Vce饱和度（最大）:200mV @ 100mA，1A 电流 - 集电极截止（最大）:100nA 在某 Ic、Vce 时的最小直流电流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 频率 - 转换:100MHz 安装类型:表面贴装 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:Digi-Reel® 其它名称:MMBT489LT1GOSDKR |
| MJE180STU | 功能描述:两极晶体管 - BJT NPN Epitaxial Sil RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJE181 | 功能描述:两极晶体管 - BJT 3A 60V 12.5W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJE181G | 功能描述:两极晶体管 - BJT 3A 60V 12.5W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
发布紧急采购，3分钟左右您将得到回复。