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参数资料
| 型号： | MJE18604D2BG |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 功率晶体管 |
| 英文描述： | 3 A, 800 V, NPN, Si, POWER TRANSISTOR |
| 封装： | PLASTIC, TO-220AB, 3 PIN |
| 文件页数： | 1/61页 |
| 文件大小： | 386K |
| 代理商： | MJE18604D2BG |
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3–779
Motorola Bipolar Power Transistor Device Data
Advance Information
High Speed, High Gain Bipolar
NPN Power Transistor with
Integrated Collector-Emitter
Diode and Built-in Efficient
Antisaturation Network for
1600 V Applications
The MJE18604D2 is state–of–art High Speed High gain BIPolar transistor (H2BIP).
Tight dynamic characteristics and lot to lot low spread (
±150 ns on storage time) make
it ideally suitable for light ballast applications. Therefore, there is no more a need to
guarantee an hfe window.
Main features:
Low Base Drive Requirement
High DC Current Gain (30 Typical) @ IC = 400 mA
Extremely Low Storage Time Min/Max Guarantees Due to the Internal Active
Antisaturation (H2BIP) Structure which Minimizes the Spread
Integrated Collector–Emitter Free Wheeling Diode Matched with the Power
Transistor
Fully Characterized and Guaranteed Dynamic VCE(sat)
“6 Sigma” Process Providing Tight and Reproductible Parameter Spreads
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Breakdown Voltage
VCEO
800
Vdc
Collector–Emitter Sustaining Voltage @ R = 200
VCER
800
Vdc
Collector–Base Breakdown Voltage
VCBO
1600
Vdc
Collector–Emitter Breakdown Voltage
VCES
1600
Vdc
Emitter–Base Voltage
VEBO
12
Vdc
Collector Current — Continuous
— Peak (1)
IC
ICM
3
8
Adc
Base Current — Continuous
Base Current — Peak (1)
IB
IBM
2
4
Adc
*Total Device Dissipation @ TC = 25_C
*Derate above 25
°C
PD
100
0.8
Watt
W/
_C
Operating and Storage Temperature
TJ, Tstg
– 65 to 150
_C
THERMAL CHARACTERISTICS
Thermal Resistance — Junction to Case
Thermal Resistance — Junction to Ambient
R
θJC
R
θJA
1.25
62.5
_C/W
Maximum Lead Temperature for Soldering Purposes:
1/8
″ from case for 5 seconds
TL
260
_C
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle
≤ 10%.
This document contains information on a new product. Specifications and information herein are subject to change without notice.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MJE18604D2
POWER TRANSISTORS
3 AMPERES
1600 VOLTS
100 WATTS
CASE 221A–06
TO–220AB
相关PDF资料 |
PDF描述 |
|---|---|
| MJE18604D2BA | 3 A, 800 V, NPN, Si, POWER TRANSISTOR |
| MJE18604D2AN | 3 A, 800 V, NPN, Si, POWER TRANSISTOR |
| MJE18604D2AJ | 3 A, 800 V, NPN, Si, POWER TRANSISTOR |
| MJE18604D2 | 3 A, 800 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| MJE18604D2BV | 3 A, 800 V, NPN, Si, POWER TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MJE200 | 功能描述:两极晶体管 - BJT 5A 25V 15W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJE200_07 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Complementary Silicon Power Plastic Transistors |
| MJE200G | 功能描述:两极晶体管 - BJT 5A 25V 15W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJE200STU | 功能描述:两极晶体管 - BJT NPN Epitaxial Sil RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJE200TSTU | 功能描述:两极晶体管 - BJT NPN Si Epitaxial Short Leads RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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