型号: | MJE2360TAF |
厂商: | ON SEMICONDUCTOR |
元件分类: | 功率晶体管 |
英文描述: | 0.5 A, 350 V, NPN, Si, POWER TRANSISTOR |
封装: | PLASTIC, TO-220AB, 3 PIN |
文件页数: | 1/59页 |
文件大小: | 340K |
代理商: | MJE2360TAF |
相关PDF资料 |
PDF描述 |
---|---|
MJE2360TAK | 0.5 A, 350 V, NPN, Si, POWER TRANSISTOR |
MJE2360TAS | 0.5 A, 350 V, NPN, Si, POWER TRANSISTOR |
MJE2360TBC | 0.5 A, 350 V, NPN, Si, POWER TRANSISTOR |
MJE2360TBU | 0.5 A, 350 V, NPN, Si, POWER TRANSISTOR |
MJE2360TBV | 0.5 A, 350 V, NPN, Si, POWER TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
---|---|
MJE2361T | 制造商:MOSPEC 制造商全称:Mospec Semiconductor 功能描述:POWER TRANSISTORS(0.5A,350V,30W) |
MJE240 | 制造商:Motorola Inc 功能描述: |
MJE241 | 制造商:CENTRAL 制造商全称:Central Semiconductor Corp 功能描述:COMPLEMENTARY SILICON POWER TRANSISTORS |
MJE242 | 制造商:CENTRAL 制造商全称:Central Semiconductor Corp 功能描述:COMPLEMENTARY SILICON POWER TRANSISTORS |
MJE243 | 功能描述:两极晶体管 - BJT 4A 100V 15W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |