型号: | MJE371LEADFREE |
厂商: | CENTRAL SEMICONDUCTOR CORP |
元件分类: | 功率晶体管 |
英文描述: | 4 A, 40 V, PNP, Si, POWER TRANSISTOR, TO-126 |
文件页数: | 1/1页 |
文件大小: | 35K |
代理商: | MJE371LEADFREE |
相关PDF资料 |
PDF描述 |
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MJE3439 | 0.3 A, 350 V, NPN, Si, POWER TRANSISTOR, TO-126 |
MJE225LEADFREE | 4 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-126 |
MJE802 | 4 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-126 |
MJE170 | 3 A, 40 V, PNP, Si, POWER TRANSISTOR, TO-126 |
MJE250LEADFREE | 4 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-126 |
相关代理商/技术参数 |
参数描述 |
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MJE4340 | 制造商:ISC 制造商全称:Inchange Semiconductor Company Limited 功能描述:Silicon NPN Power Transistors |
MJE4341 | 制造商:MOSPEC 制造商全称:Mospec Semiconductor 功能描述:POWER TRANSISTORS(16A,100-160V,125W) |
MJE4342 | 制造商:MOSPEC 制造商全称:Mospec Semiconductor 功能描述:POWER TRANSISTORS(16A,100-160V,125W) |
MJE4343 | 功能描述:两极晶体管 - BJT 16A 160V 125W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
MJE4343_06 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:High?Voltage High Power Transistors |