型号: | MJE521 |
厂商: | NATIONAL SEMICONDUCTOR CORP |
元件分类: | 功率晶体管 |
英文描述: | NPN, Si, POWER TRANSISTOR, TO-220AB |
封装: | TO-220, 3 PIN |
文件页数: | 1/20页 |
文件大小: | 735K |
代理商: | MJE521 |
相关PDF资料 |
PDF描述 |
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MPSA92/D11Z{OPTION5} | 500 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
MPSA18/D89Z | 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
MPSA18/D26Z{OPTION18} | 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
MPSH10/D26Z{OPTION5} | Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-92 |
MPSH11/D89Z{OPTION18} | Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-92 |
相关代理商/技术参数 |
参数描述 |
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MJE521 | 制造商:STMicroelectronics 功能描述:Bipolar Transistor |
MJE521_03 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:SILICON NPN TRANSISTOR |
MJE521G | 功能描述:两极晶体管 - BJT 4A 40V 40W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
MJE52T | 制造商:ISC 制造商全称:Inchange Semiconductor Company Limited 功能描述:isc Silicon NPN Power Transistor |
MJE53T | 制造商:ISC 制造商全称:Inchange Semiconductor Company Limited 功能描述:isc Silicon NPN Power Transistor |