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参数资料
| 型号： | MJE521 |
| 厂商： | STMICROELECTRONICS |
| 元件分类： | 功率晶体管 |
| 英文描述： | 4 A, 40 V, NPN, Si, POWER TRANSISTOR, TO-126 |
| 文件页数： | 1/4页 |
| 文件大小： | 44K |
| 代理商： | MJE521 |
MJE521
SILICON NPN TRANSISTOR
s
STMicroelectronics PREFERRED
SALESTYPE
DESCRIPTION
The MJE521 is a silicon Epitaxial-Base NPN
transistor in Jedec SOT-32 plastic package.
It is intended for use in 5 to 20W audio amplifiers,
general purpose amplifier and switching circuits.
INTERNAL SCHEMATIC DIAGRAM
September 2003
3
2
1
SOT-32
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage (IE = 0)
40
V
VCEO
Collector-Emitter Voltage (IB = 0)
40
V
VEBO
Emitter-Base Voltage (IC = 0)
4
V
IC
Collector Current
4
A
ICM
Collector Peak Current (tp < 5 ms)
8
A
IB
Base Current
2
A
Ptot
Total Dissipation at Tc
≤ 25 oC
40
W
Tstg
Storage Temperature
-65 to 150
oC
Tj
Max. Operating Junction Temperature
150
oC
1/4
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PDF描述 |
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| MJE6043 | 8 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-127 |
| MJE700 | 4 A, 60 V, PNP, Si, POWER TRANSISTOR |
| MJE701 | 4 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-126 |
| MJE800 | 4 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-126 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MJE521 | 制造商:STMicroelectronics 功能描述:Bipolar Transistor |
| MJE521_03 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:SILICON NPN TRANSISTOR |
| MJE521G | 功能描述:两极晶体管 - BJT 4A 40V 40W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJE52T | 制造商:ISC 制造商全称:Inchange Semiconductor Company Limited 功能描述:isc Silicon NPN Power Transistor |
| MJE53T | 制造商:ISC 制造商全称:Inchange Semiconductor Company Limited 功能描述:isc Silicon NPN Power Transistor |
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