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参数资料
| 型号： | MJE5852BV |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 功率晶体管 |
| 英文描述： | 8 A, 400 V, PNP, Si, POWER TRANSISTOR |
| 封装： | PLASTIC, TO-220AB, 3 PIN |
| 文件页数： | 1/63页 |
| 文件大小： | 445K |
| 代理商： | MJE5852BV |
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3–644
Motorola Bipolar Power Transistor Device Data
Designer's Data Sheet
SWITCHMODE Series
PNP Silicon Power Transistors
The MJE5850, MJE5851 and the MJE5852 transistors are designed for high–volt-
age, high–speed, power switching in inductive circuits where fall time is critical. They
are particularly suited for line operated switchmode applications such as:
Switching Regulators
Inverters
Solenoid and Relay Drivers
Motor Controls
Deflection Circuits
Fast Turn–Off Times
100 ns Inductive Fall Time @ 25
_C (Typ)
125 ns Inductive Crossover Time @ 25
°C (Typ)
Operating Temperature Range – 65 to + 150
_C
100
_C Performance Specified for:
Reversed Biased SOA with Inductive Loads
Switching Times with Inductive Loads
Saturation Voltages
Leakage Currents
MAXIMUM RATINGS
Rating
Symbol
MJE5850
MJE5851
MJE5852
Unit
Collector–Emitter Voltage
VCEO(sus)
300
350
400
Vdc
Collector–Emitter Voltage
VCEV
350
400
450
Vdc
Emitter Base Voltage
VEB
6.0
Vdc
Collector Current — Continuous
Peak (1)
IC
ICM
8.0
1 6
Adc
Base Current — Continuous
Peak (1)
IB
IBM
4.0
8.0
Adc
Total Power Dissipation
@ TC = 25_C
Derate above 25
_C
PD
80
0.640
Watts
W/
_C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 65 to 150
_C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θJC
1.25
_C/W
Maximum Lead Temperature for Soldering
Purposes: 1/8
″ from Case for 5 Seconds
TL
275
_C
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle
v 10%.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred devices are Motorola recommended choices for future use and best overall value.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MJE5850
MJE5851
MJE5852
8 AMPERE
PNP SILICON
POWER TRANSISTORS
300, 350, 400 VOLTS
80 WATTS
*Motorola Preferred Device
CASE 221A–06
TO–220AB
*
相关PDF资料 |
PDF描述 |
|---|---|
| MJE5852BU | 8 A, 400 V, PNP, Si, POWER TRANSISTOR |
| MJE5852BG | 8 A, 400 V, PNP, Si, POWER TRANSISTOR |
| MJE5852BD | 8 A, 400 V, PNP, Si, POWER TRANSISTOR |
| MJE5852AN | 8 A, 400 V, PNP, Si, POWER TRANSISTOR |
| MJE5852AK | 8 A, 400 V, PNP, Si, POWER TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MJE5852G | 功能描述:两极晶体管 - BJT 8A 400V 80W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJE6040 | 制造商:NJSEMI 制造商全称:New Jersey Semi-Conductor Products, Inc. 功能描述:POWER DERATING |
| MJE6041 | 制造商:NJSEMI 制造商全称:New Jersey Semi-Conductor Products, Inc. 功能描述:POWER DERATING |
| MJE6043 | 制造商:NJSEMI 制造商全称:New Jersey Semi-Conductor Products, Inc. 功能描述:POWER DERATING |
| MJE6044 | 制造商:NJSEMI 制造商全称:New Jersey Semi-Conductor Products, Inc. 功能描述:POWER DERATING |
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