- 您现在的位置：买卖IC网 > PDF目录299480 > MJE722 (CENTRAL SEMICONDUCTOR CORP) COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS PDF资料下载
参数资料
| 型号： | MJE722 |
| 厂商： | CENTRAL SEMICONDUCTOR CORP |
| 元件分类： | 功率晶体管 |
| 英文描述： | COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS |
| 中文描述： | 1.5 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-126 |
| 文件页数： | 1/2页 |
| 文件大小： | 135K |
| 代理商： | MJE722 |
MAXIMUM RATINGS: (TA=25°C unless otherwise noted)
MJE710
MJE711
MJE712
SYMBOL
MJE720
MJE721
MJE722
UNITS
Collector-Base Voltage
VCBO
40
60
80
V
Collector-Emitter Voltage
VCEO
40
60
80
V
Emitter-Base Voltage
VEBO
5.0
V
Continuous Collector Current
IC
1.5
A
Base Current
IB
0.5
A
Power Dissipation
PD
1.25
W
Power Dissipation (TC=25°C)
PD
20
W
Operating and Storage Junction Temperature
TJ, Tstg
-65 to +150
°C
Thermal Resistance
ΘJA
100
°C/W
Thermal Resistance
ΘJC
6.25
°C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
ICEV
VCE=Rated VCEO, VBE(OFF)=1.5V
100
μA
ICEV
VCE=Rated VCEO, VBE(OFF)=1.5V (TC=125°C)
500
μA
ICEO
VCE=1/2 Rated VCEO
500
μA
IEBO
VEB=5.0V
1.0
mA
BVCEO
IC=50mA (MJE710, MJE720)
40
V
BVCEO
IC=50mA (MJE711, MJE721)
60
V
BVCEO
IC=50mA (MJE712, MJE722)
80
V
VCE(SAT)
IC=150mA, IB=15mA
0.15
V
VCE(SAT)
IC=500mA, IB=50mA
0.4
V
VCE(SAT)
IC=1.5A, IB=300mA
1.0
V
VBE(SAT)
IC=1.5A, IB=300mA
1.3
V
VBE(ON)
VCE=1.0V, IC=500mA
0.95
V
hFE
VCE=1.0V, IC=150mA
40
hFE
VCE=1.0V, IC=500mA
20
hFE
VCE=1.0V, IC=1.0A
8.0
COMPLEMENTARY SILICON
POWER TRANSISTORS
TO-126 CASE
Central
Semiconductor Corp.
TM
R1 (16-September 2008)
DESCRIPTION:
The CENTRAL SEMICONDUCTOR MJE710, MJE720
series types are Complementary Silicon Power
Transistors designed for low power amplifier and
medium speed switching aplications.
MARKING: FULL PART NUMBER
MJE710
MJE711
MJE712
PNP
MJE720
MJE721
MJE722
NPN
相关PDF资料 |
PDF描述 |
|---|---|
| MJFS-R1-66-4-GF5-XXF2 | 24 CONTACT(S), FEMALE, TELECOM AND DATACOM CONNECTOR, SOLDER, JACK |
| MJFS-R1-86-XXF2 | 6 CONTACT(S), FEMALE, TELECOM AND DATACOM CONNECTOR, SOLDER, JACK |
| MJFS-R1-86-XXF3 | 6 CONTACT(S), FEMALE, TELECOM AND DATACOM CONNECTOR, SOLDER, JACK |
| MJFS-R1-86-XXF4 | 6 CONTACT(S), FEMALE, TELECOM AND DATACOM CONNECTOR, SOLDER, JACK |
| MJFS-R1-88-2-GF5-XXF1 | 16 CONTACT(S), FEMALE, TELECOM AND DATACOM CONNECTOR, SOLDER, JACK |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MJE800 | 功能描述:达林顿晶体管 4A 60V Bipolar RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| MJE800G | 功能描述:达林顿晶体管 4A 60V Bipolar Power NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| MJE800STU | 功能描述:达林顿晶体管 NPN Si Transistor Epitaxial Darlington RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| MJE800T | 制造商:MOSPEC 制造商全称:Mospec Semiconductor 功能描述:POWER TRANSISTORS(4.0A,60-80V,40W) |
| MJE801 | 功能描述:达林顿晶体管 RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
发布紧急采购，3分钟左右您将得到回复。