参数资料
型号: MJE802
厂商: STMICROELECTRONICS
元件分类: 功率晶体管
英文描述: 4 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-126
文件页数: 1/8页
文件大小: 254K
代理商: MJE802
August 2009
Doc ID 4958 Rev 4
1/8
8
MJE802
NPN power Darlington transistor
Features
Good hFE linearity
High fT frequency
Monolithic Darlington configuration with
integrated antiparallel collector-emitter diode
Application
Linear and switching industrial equipment
Description
The device is manufactured in planar technology
with “base island” layout and monolithic
Darlington configuration.
.
Figure 1.
Internal schematic diagram
SOT-32
3
2
1
R1 typ. = 15 kΩ
R2 typ. = 100 Ω
Table 1.
Device summary
Order code
Marking
Package
Packaging
MJE802
SOT-32
Tube
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相关代理商/技术参数
参数描述
MJE802 制造商:STMicroelectronics 功能描述:Darlington Bipolar Transistor 制造商:STMicroelectronics 功能描述:DARLINGTON TRANSISTOR, NPN, 80V
MJE802_03 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:SILICON NPN POWER DARLINGTON TRANSISTOR
MJE802G 功能描述:达林顿晶体管 4A 80V Bipolar Power NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel
MJE802STU 功能描述:达林顿晶体管 NPN Si Transistor Epitaxial Darlington RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel
MJE802T 制造商:MOSPEC 制造商全称:Mospec Semiconductor 功能描述:POWER TRANSISTORS(4.0A,60-80V,40W)