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参数资料
| 型号： | MJE802T |
| 厂商： | CENTRAL SEMICONDUCTOR CORP |
| 元件分类： | 功率晶体管 |
| 英文描述： | 4 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封装： | TO-220, 3 PIN |
| 文件页数： | 1/1页 |
| 文件大小： | 34K |
| 代理商： | MJE802T |
Power Transistors
TO-220 Case (Continued)
www.centr alsemi.com
Shaded areas indicate Darlington.
TYPE NO.
IC
PD
BVCBO BVCEO
hFE
@ IC VCE(SAT) @ IC
fT
(A)
(W)
(V)
(A)
(V)
(A)
(MHz)
NPN
PNP
MAX
MIN
MAX
MIN
2N6497
5.0
80
350
250
10
75
2.5
5.0
2N6498
5.0
80
400
300
10
75
2.5
5.0
2N6499
5.0
80
450
350
10
75
2.5
5.0
2N6530
8.0
65
80
1,000
10,000
5.0
3.0
8.0
20
2N6531
8.0
65
100
500
10,000
3.0
8.0
20
2N6532
8.0
65
100
1,000
10,000
5.0
3.0
8.0
20
2N6533
8.0
65
120
1,000
10,000
3.0
8.0
20
BU406
7.0
60
400
200
- -
1.0
5.0
10
BU406D
7.0
60
400
200
- -
1.0
5.0
10
BU407
7.0
60
330
150
- -
1.0
5.0
10
BU407D
7.0
60
330
150
- -
1.0
5.0
10
BU408
7.0
60
400
200
- -
1.0
6.0
10
BU408D
7.0
60
400
200
- -
1.0
6.0
10
BU806
8.0
60
400
200
- -
1.5
5.0
- -
BU807
8.0
60
330
150
- -
1.5
5.0
- -
D44C11
4.0
30
80
20
- -
2.0
0.5
1.0
50
D44H11
D45H11
10
50
80
40
- -
1.0
8.0
40
MJE800T
MJE700T
4.0
50
60
750
- -
1.5
2.5
1.5
1.0
MJE801T
MJE701T
4.0
50
60
750
- -
2.0
2.8
2.0
1.0
MJE802T
MJE702T
4.0
50
80
750
- -
1.5
2.5
1.5
1.0
MJE803T
MJE703T
4.0
50
80
750
- -
2.0
2.8
2.0
1.0
MJE2801T
MJE2901T
10
75
60
25
100
3.0
- -
MJE3055T
MJE2955T
10
75
70
60
20
100
4.0
1.1
4.0
2.0
MJE13004
4.0
75
600
300
8.0
40
2.0
0.5
1.0
4.0
MJE13005
4.0
75
700
400
8.0
40
2.0
0.5
1.0
4.0
MJE13006
8.0
80
600
300
5.0
30
5.0
1.0
2.0
4.0
MJE13007
8.0
80
700
400
5.0
30
5.0
1.0
2.0
4.0
MJE13007A
8.0
80
850
400
5.0
30
5.0
3.0
8.0
4.0
MJE13008
12
100
600
300
6.0
30
8.0
1.0
5.0
4.0
MJE13009
12
100
700
400
6.0
30
8.0
1.0
5.0
4.0
Standard
Optional
TO-220
TO-220FP Full Pak
Fully Isolated
(6-December 2004)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MJE803 | 功能描述:达林顿晶体管 4A 80V Bipolar RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| MJE803G | 功能描述:达林顿晶体管 4A 80V Bipolar Power NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| MJE803STU | 功能描述:达林顿晶体管 NPN Transisitor Epitaxial Darlington RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| MJE803T | 制造商:MOSPEC 制造商全称:Mospec Semiconductor 功能描述:POWER TRANSISTORS(4.0A,60-80V,40W) |
| MJE8500 | 制造商:ISC 制造商全称:Inchange Semiconductor Company Limited 功能描述:Silicon NPN Power Transistor |
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