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| 型号： | MJF15030 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 功率晶体管 |
| 英文描述： | COMPLEMENTARY SILICON POWER TRANSISTORS |
| 中文描述： | 8 A, 150 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封装： | CASE 221D-03, TO-220, FULL PACK-3 |
| 文件页数： | 1/6页 |
| 文件大小： | 246K |
| 代理商： | MJF15030 |
1
Motorola Bipolar Power Transistor Device Data
For Isolated Package Applications
Designed for general–purpose amplifier and switching applications, where the
mounting surface of the device is required to be electrically isolated from the heatsink
or chassis.
Electrically Similar to the Popular MJE15030 and MJE15031
150 VCEO(sus)
8 A Rated Collector Current
No Isolating Washers Required
Reduced System Cost
High Current Gain–Bandwidth Product
fT = 30 MHz (Min) @ IC = 500 mAdc
UL Recognized, File #E69369, to 3500 VRMS Isolation
TO–220 TYPE
(for 1 sec, R.H. < 30%,
3500
Test No. 2 Per Fig. 12
Derate above 25 C
0.29
W/ C
Total Power Dissipation @ TA = 25 C
PD
2
Watts
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Symbol
R
θ
JA
R
θ
JC
TL
Max
62.5
Unit
C/W
Thermal Resistance, Junction to Case*
3.5
C/W
Lead Temperature for Soldering Purpose
260
C
a heatsink with thermal grease and a mounting torque of
≥
6 in. lbs.
(1) Proper strike and creepage distance must be provided.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJF15030/D
COMPLEMENTARY
SILICON
POWER TRANSISTORS
8 AMPERES
150 VOLTS
36 WATTS
相关PDF资料 |
PDF描述 |
|---|---|
| MJF15031 | COMPLEMENTARY SILICON POWER TRANSISTORS |
| MJF15031 | COMPLEMENTARY SILICON POWER TRANSISTORS 8 AMPERES 150 VOLTS 36 WATTS |
| MJF18002 | POWER TRANSISTOR 2.0 AMPERES 1000 VOLTS 25 and 50 WATTS |
| MJF18002 | POWER TRANSISTOR |
| MJE18002 | POWER TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MJF15030_06 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:COMPLEMENTARY SILICON POWER TRANSISTORS 8 AMPERES 150 VOLTS, 36 WATTS |
| MJF15030_08 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Complementary Power Transistors |
| MJF15030G | 功能描述:两极晶体管 - BJT 8A 150V 36W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJF15031 | 功能描述:两极晶体管 - BJT 8A 150V 36W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJF15031G | 功能描述:两极晶体管 - BJT 8A 150V 36W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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