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参数资料
| 型号： | MJF18008 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | POWER TRANSISTOR 8.0 AMPERES 1000 VOLTS 45 and 125 WATTS |
| 中文描述： | 8 A, 450 V, NPN, Si, POWER TRANSISTOR, TO-220 |
| 封装： | TO-220, 3 PIN |
| 文件页数： | 1/10页 |
| 文件大小： | 421K |
| 代理商： | MJF18008 |
1
Motorola Bipolar Power Transistor Device Data
NPN Bipolar Power Transistor
For Switching Power Supply Applications
The MJE/MJF18008 have an applications specific state–of–the–art die designed
for use in 220 V line–operated Switchmode Power supplies and electronic light
ballasts. These high voltage/high speed transistors offer the following:
Improved Efficiency Due to Low Base Drive Requirements:
— High and Flat DC Current Gain hFE
— Fast Switching
— No Coil Required in Base Circuit for Turn–Off (No Current Tail)
Tight Parametric Distributions are Consistent Lot–to–Lot
— Peak(1)
ICM
16
Base Current — Continuous
4.0
Adc
(for 1 sec, R.H. < 30%,
IB
—
Test No. 1 Per Fig. 22b
3500
Operating and Storage Temperature
–65 to 150
Rating
Thermal Resistance — Junction to Case
Symbol
R
θ
JA
MJE18008
1.0
MJF18008
2.78
Unit
C/W
Characteristic
Collector–Emitter Sustaining Voltage (IC = 100 mA, L = 25 mH)
Collector Cutoff Current (VCE = Rated VCEO, IB = 0)
Collector Cutoff Current (VCE = Rated VCES, VEB = 0)
Collector Cutoff Current
(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle
10%.
Designer’s Data for “Worst Case” Conditions
— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred
devices are Motorola recommended choices for future use and best overall value.
Symbol
Min
Typ
Max
Unit
VCEO(sus)
ICEO
ICES
450
—
—
—
—
—
—
—
—
100
100
100
Vdc
μ
Adc
μ
Adc
—
—
100
μ
Adc
(continued)
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.
REV 1
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJE18008/D
POWER TRANSISTOR
8.0 AMPERES
1000 VOLTS
45 and 125 WATTS
*Motorola Preferred Device
CASE 221A–06
TO–220AB
MJE18008
CASE 221D–02
ISOLATED TO–220 TYPE
UL RECOGNIZED
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MJF18008G | 功能描述:两极晶体管 - BJT 8A 450V 45W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJF18009 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:POWER TRANSISTORS |
| MJF18204 | 制造商:ON SEM 功能描述: 制造商:ON Semiconductor 功能描述: |
| MJF18206 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:POWER TRANSISTORS |
| MJF2955 | 功能描述:两极晶体管 - BJT 10A 90V 30W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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