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参数资料
| 型号： | MJF6107 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 功率晶体管 |
| 英文描述： | 7 A, 70 V, PNP, Si, POWER TRANSISTOR |
| 封装： | ISOLATED TO-220, 3 PIN |
| 文件页数： | 4/8页 |
| 文件大小： | 102K |
| 代理商： | MJF6107 |
MJF6107
http://onsemi.com
4
I C
,COLLECT
OR
CURRENT
(AMPS)
50 s
0.1 ms
dc
10
2
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
3
100
3
2
5
0.5
720 30
50
0.3
0.15
70
15
10
Figure 4. Active–Region Safe Operating
Area
CURRENT LIMIT
SECONDARY BREAKDOWN LIM
IT
THERMAL LIMIT @ TC = 25°C
(SINGLE PULSE)
15
7
1
0.7
0.2
0.5 ms
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC – VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 150
_C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
v 150_C. TJ(pk) may be calculated from the data in
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
C,
CAP
ACIT
ANCE
(pF)
t,TIME
(s)
300
VR, REVERSE VOLTAGE (VOLTS)
Cib
0.5
100
50
TJ = 25°C
200
70
3
1
Figure 5. Turn–Off Time
Figure 6. Capacitance
Figure 7. DC Current Gain
Figure 8. Collector Saturation Region
2.5 A
0.07
IC, COLLECTOR CURRENT (AMP)
V CE
,COLLECT
OR-EMITTER
VOL
TAGE
(VOL
TS)
0.07
IC, COLLECTOR CURRENT (AMP)
0.1
7
500
TJ = 150°C
110
IB, BASE CURRENT (mA)
0.4
1000
1.2
2
h FE
,DC
CURRENT
GAIN
100
5 A
0.8
1.6
5
50
30
5
230
10
20
VCE = 2 V
300
200
100
70
50
30
20
10
7
0.2 0.3
0.5 0.7
2
3
5
20
200
30
300
50
500
0
IC = 1 A
TJ = 25°C
VCC = 30 V
IC/IB = 10
IB1 = IB2
5
0.05
3
2
1
0.7
0.5
0.3
0.2
0.1
0.07
0.1
7
1
0.2 0.3
0.5 0.7
2
3
5
ts
tf
Cob
TJ = 25°C
25°C
-55°C
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