参数资料
型号: MJH6282
厂商: ON SEMICONDUCTOR
元件分类: 功率晶体管
英文描述: 20 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-218
封装: PLASTIC, CASE 340D-01, 3 PIN
文件页数: 1/61页
文件大小: 397K
代理商: MJH6282
3–821
Motorola Bipolar Power Transistor Device Data
Darlington Complementary
Silicon Power Transistors
. . . designed for general–purpose amplifier and low–speed switching motor control
applications.
Similar to the Popular NPN 2N6282, 2N6283, 2N6284 and the PNP 2N6285,
2N6286, 2N6287
Rugged RBSOA Characteristics
Monolithic Construction with Built–in Collector–Emitter Diode
MAXIMUM RATINGS
Rating
Symbol
MJH6282
MJH6285
MJH6283
MJH6286
MJH6284
MJH6287
Unit
Collector–Emitter Voltage
VCEO
60
80
100
Vdc
Collector–Base Voltage
VCB
60
80
100
Vdc
Emitter–Base Voltage
VEB
5.0
Vdc
Collector Current — Continuous
Peak
IC
20
40
Adc
Base Current
IB
0.5
Adc
Total Device Dissipation @
TC = 25_C
Derate above 25
_C
PD
160
1.28
Watts
W/
_C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 65 to + 150
_C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θJC
0.78
_C/W
160
P
D
,POWER
DISSIP
A
TION
(W
A
TTS)
0
TC, CASE TEMPERATURE (°C)
50
75
125
150
200
100
175
25
Figure 1. Power Derating
0
20
40
60
80
100
140
120
Preferred devices are Motorola recommended choices for future use and best overall value.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MJH6282
MJH6283
MJH6284
MJH6285
MJH6286
MJH6287
DARLINGTON
20 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
60, 80, 100 VOLTS
160 WATTS
*Motorola Preferred Device
*
NPN
PNP
*
CASE 340D–01
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