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参数资料
| 型号： | MJL21196 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | 16 A, 250 V, NPN, Si, POWER TRANSISTOR |
| 封装： | TO-3PBL, 3 PIN |
| 文件页数： | 1/6页 |
| 文件大小： | 135K |
| 代理商： | MJL21196 |
1
Motorola Bipolar Power Transistor Device Data
Silicon Power Transistors
The MJL21195 and MJL21196 utilize Perforated Emitter technology and are
specifically designed for high power audio output, disk head positioners and linear
applications.
Total Harmonic Distortion Characterized
High DC Current Gain – hFE = 25 Min @ IC = 8 Adc
Excellent Gain Linearity
High SOA: 2.50 A, 80 V, 1 Second
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
250
Vdc
Collector–Base Voltage
VCBO
400
Vdc
Emitter–Base Voltage
VEBO
5
Vdc
Collector–Emitter Voltage – 1.5 V
VCEX
400
Vdc
Collector Current — Continuous
Collector Current — Peak (1)
IC
16
30
Adc
Base Current – Continuous
IB
5
Adc
Total Power Dissipation @ TC = 25°C
Derate Above 25
°C
PD
200
1.43
Watts
W/
°C
Operating and Storage Junction Temperature Range
TJ, Tstg
– 65 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θJC
0.7
°C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typical
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage
(IC = 100 mAdc, IB = 0)
VCEO(sus)
250
—
Vdc
Collector Cutoff Current
(VCE = 200 Vdc, IB = 0)
ICEO
—
100
Adc
(1) Pulse Test: Pulse Width = 5.0
s, Duty Cycle ≤10%.
(continued)
Preferred devices are Motorola recommended choices for future use and best overall value.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJL21195/D
Motorola, Inc. 1998
MJL21195
MJL21196
16 AMPERE
COMPLEMENTARY
SILICON POWER
TRANSISTORS
250 VOLTS
200 WATTS
*
*Motorola Preferred Device
PNP
*
NPN
CASE 340G–02
TO–3PBL
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|---|---|
| MJL21195 | 16 A, 250 V, PNP, Si, POWER TRANSISTOR |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MJL21196G | 功能描述:两极晶体管 - BJT 16A 250V 200W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJL3281 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS |
| MJL3281A | 功能描述:两极晶体管 - BJT 15A 230V 200W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJL3281A_05 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:15 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 260 VOLTS 200 WATTS |
| MJL3281AG | 功能描述:两极晶体管 - BJT 15A 230V 200W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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