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参数资料
| 型号： | MJW16010 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | 15 AMPERE NPN SILICON POWER TRANSISTORS 450 VOLTS 135 AND 175 WATTS |
| 中文描述： | 15 A, 450 V, NPN, Si, POWER TRANSISTOR, TO-247AE |
| 文件页数： | 8/10页 |
| 文件大小： | 548K |
| 代理商： | MJW16010 |
8
Motorola Bipolar Power Transistor Device Data
H.P. 214
or EQUIV.
P.G.
0 V
≈
–35 V
50
500
+
–
+V
≈
11 V
2N6191
RB1
A
–V
100
0.02
μ
F
1.0
μ
F
10
μ
F
+
–
20
0.02
μ
F
100
2N5337
RB2
IC(pk)
VCE(pk)
IC
VCE
IB
IB1
IB2
VCE(pk) = VCE(clamp)
VCC
Vclamp
L
T.U.T.
*IC
*IB
–V
+V
T1
0 V
A
50
MR856
Scope — Tektronix
7403 or Equivalent
t1
Lcoil(ICpk)
VCC
Note: Adjust –V to obtain desired VBE(off) at Point A.
VCEO(sus)
L = 10 mH
RB2 =
∞
VCC = 20 V Its
Inductive Switching
L = 200
μ
H
RB2 = 0
VCC = 20 V
RB1 selected for desired IB1
RBSOA
L = 200
μ
H
RB2 = 0
VCC = 20 V
RB1 selected for desired IB1
*Tektronix AM503
*
P6302 or
Equivalent
T1 adjusted to obtain IC(pk)
Table 2. Inductive Load Switching
tsv
tfi, tc
IC(pk) = 10 A
IB1 = 1.0 A
VBE(off) = 5.0 V
VCE(pk) = 400 V
TC = 25
°
C
Time Base =
100 ns/cm
IC(pk) = 10 A
IB1 = 1.0 A
VBE(off) = 5.0 V
VCE(pk) = 400 V
TC = 25
°
C
Time Base =
20 ns/cm
VCE(pk)
IB1
0
IB2
VCE(sat)
tsv= 370 ns
IC(pk)
tfi= 20 ns
VCE(pk)
VCE(sat)
24 ns
tc
TYPICAL INDUCTIVE SWITCHING WAVEFORMS
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MJW16010A | 制造商:ISC 制造商全称:Inchange Semiconductor Company Limited 功能描述:isc Silicon NPN Power Transistor |
| MJW16012 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:NPN SILICON POWER TRANSISTORS |
| MJW16018 | 制造商:SAVANTIC 制造商全称:Savantic, Inc. 功能描述:Silicon NPN Power Transistors |
| MJW16110 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:NPN Silicon Power Transistors |
| MJW16206 | 制造商:ON Semiconductor 功能描述:Trans GP BJT NPN 500V 12A 3-Pin(3+Tab) TO-247AE 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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