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参数资料
| 型号： | MJW16012 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 功率晶体管 |
| 英文描述： | NPN SILICON POWER TRANSISTORS |
| 中文描述： | 15 A, 450 V, NPN, Si, POWER TRANSISTOR, TO-247AE |
| 封装： | CASE 340F-03, 3 PIN |
| 文件页数： | 7/10页 |
| 文件大小： | 548K |
| 代理商： | MJW16012 |
7
Motorola Bipolar Power Transistor Device Data
P
100
0
TC, CASE TEMPERATURE (
°
C)
Figure 18. Power Derating
0
40
200
80
60
40
20
MJW16010, MJW16012
MJ16010, MJ16012
80
120
160
Figure 17. Thermal Response
SECOND BREAKDOWN DERATING
THERMAL DERATING
t, TIME (ms)
1.0
0.01
0.01
0.1
r
1.0
10
100
R
θ
JC(t) = r(t) R
θ
JC
R
θ
JC = 1.0
°
C/W or 1.11
°
C/W
TJ(pk) – TC = P(pk) R
θ
JC(t)
0.1
(
1K
td and tr
ts and tf
H.P. 214
or
EQUIV.
P.G.
*IB
*IC
50
RB = 10
T.U.T.
RL
VCC
Vin
0 V
≈
11 V
tr
≤
15 ns
VCC = 250 Vdc
RL = 25
IC = 10 Adc
IB = 1.0 Adc
H.P. 214
or
EQUIV.
P.G.
0 V
≈
–35 V
5
0
500
+
–
20
100
+Vdc
≈
11 Vdc
2N6191
RB1
RB2
A
2N5337
–V
100
0.02
μ
F
10
μ
F
0.02
μ
F
1.0
μ
F
0 V
+V
–5 V
*IB
*IC
RL
VCC
T.U.T.
50
A
VCC = 250 Vdc
RL = 25
IC = 10 Adc
IB1 = 1.0 Adc
IB2 = 2.0 Adc
For VBE(off) = 5.0 V, RB2 = 0
RB1 = 10
RB2 = 1.6
Note: Adjust –V to obtain desired VBE(off) at Point A.
*Tektronix AM503
*
P6302 or Equivalent
Table 1. Resistive Load Switching
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| MJ16010 | NPN SILICON POWER TRANSISTORS |
| MJ16012 | NPN SILICON POWER TRANSISTORS |
| MJW16010 | 15 AMPERE NPN SILICON POWER TRANSISTORS 450 VOLTS 135 AND 175 WATTS |
| MJW16012 | 15 AMPERE NPN SILICON POWER TRANSISTORS 450 VOLTS 135 AND 175 WATTS |
| MJ16012 | 15 AMPERE NPN SILICON POWER TRANSISTORS 450 VOLTS 135 AND 175 WATTS |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MJW16018 | 制造商:SAVANTIC 制造商全称:Savantic, Inc. 功能描述:Silicon NPN Power Transistors |
| MJW16110 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:NPN Silicon Power Transistors |
| MJW16206 | 制造商:ON Semiconductor 功能描述:Trans GP BJT NPN 500V 12A 3-Pin(3+Tab) TO-247AE 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MJW16212 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MJW18020 | 功能描述:两极晶体管 - BJT 20A 450V 250W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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