参数资料
型号: MK53N512CMD100
厂商: FREESCALE SEMICONDUCTOR INC
元件分类: 微控制器/微处理器
英文描述: FLASH, 100 MHz, RISC MICROCONTROLLER, PBGA144
封装: 13 X 13 MM, MAPBGA-144
文件页数: 26/80页
文件大小: 1902K
代理商: MK53N512CMD100
6.4.1.2 Flash timing specifications — commands
Table 19. Flash command timing specifications
Symbol
Description
Min.
Typ.
Max.
Unit
Notes
trd1blk256k
Read 1s Block execution time
256 KB data flash
—
1.4
ms
trd1sec2k
Read 1s Section execution time (flash sector)
—
40
μs
tpgmchk
Program Check execution time
—
35
μs
trdrsrc
Read Resource execution time
—
35
μs
tpgm4
Program Longword execution time
—
50
TBD
μs
tersblk256k
Erase Flash Block execution time
256 KB data flash
—
160
800
ms
tersscr
Erase Flash Sector execution time
—
20
100
ms
tpgmsec512
tpgmsec1k
tpgmsec2k
Program Section execution time
512 B flash
1 KB flash
2 KB flash
—
TBD
ms
trd1all
Read 1s All Blocks execution time
—
2.8
ms
trdonce
Read Once execution time
—
35
μs
tpgmonce
Program Once execution time
—
50
TBD
μs
tersall
Erase All Blocks execution time
—
320
1600
ms
tvfykey
Verify Backdoor Access Key execution time
—
35
μs
tpgmpart256k
Program Partition for EEPROM execution time
256 KB FlexNVM
—
175
TBD
ms
tsetram32k
tsetram256k
Set FlexRAM Function execution time:
32 KB EEPROM backup
256 KB EEPROM backup
—
TBD
ms
Byte-write to FlexRAM for EEPROM operation
teewr8bers Byte-write to erased FlexRAM location execution
time
—
100
TBD
μs
teewr8b32k
teewr8b64k
teewr8b128k
teewr8b256k
Byte-write to FlexRAM execution time:
32 KB EEPROM backup
64 KB EEPROM backup
128 KB EEPROM backup
256 KB EEPROM backup
—
TBD
1.5
TBD
2.5
ms
Word-write to FlexRAM for EEPROM operation
Table continues on the next page...
Peripheral operating requirements and behaviors
K53 Sub-Family Data Sheet Data Sheet, Rev. 4, 3/2011.
32
Preliminary
Freescale Semiconductor, Inc.
相关PDF资料
PDF描述
MK53X256CLQ100R FLASH, 100 MHz, RISC MICROCONTROLLER, PQFP144
MK60DN256ZVMD10R 32-BIT, FLASH, 100 MHz, RISC MICROCONTROLLER, PBGA144
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MK60DN512ZVLQ10R 32-BIT, FLASH, 100 MHz, RISC MICROCONTROLLER, PQFP144
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