- 您现在的位置：买卖IC网 > PDF目录45332 > MK60N256VLQ100 (FREESCALE SEMICONDUCTOR INC) FLASH, 100 MHz, RISC MICROCONTROLLER, PQFP144 PDF资料下载
参数资料
| 型号： | MK60N256VLQ100 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 微控制器/微处理器 |
| 英文描述： | FLASH, 100 MHz, RISC MICROCONTROLLER, PQFP144 |
| 封装： | 20 X 20 MM, LQFP-144 |
| 文件页数： | 27/76页 |
| 文件大小： | 1862K |
| 代理商： | MK60N256VLQ100 |
第1页第2页第3页第4页第5页第6页第7页第8页第9页第10页第11页第12页第13页第14页第15页第16页第17页第18页第19页第20页第21页第22页第23页第24页第25页第26页当前第27页第28页第29页第30页第31页第32页第33页第34页第35页第36页第37页第38页第39页第40页第41页第42页第43页第44页第45页第46页第47页第48页第49页第50页第51页第52页第53页第54页第55页第56页第57页第58页第59页第60页第61页第62页第63页第64页第65页第66页第67页第68页第69页第70页第71页第72页第73页第74页第75页第76页
Table 19. Flash command timing specifications (continued)
Symbol
Description
Min.
Typ.
Max.
Unit
Notes
teewr16bers Word-write to erased FlexRAM location
execution time
—
100
TBD
μs
teewr16b32k
teewr16b64k
teewr16b128k
teewr16b256k
Word-write to FlexRAM execution time:
32 KB EEPROM backup
64 KB EEPROM backup
128 KB EEPROM backup
256 KB EEPROM backup
—
TBD
1.5
TBD
2.5
ms
Longword-write to FlexRAM for EEPROM operation
teewr32bers Longword-write to erased FlexRAM location
execution time
—
200
TBD
μs
teewr32b32k
teewr32b64k
teewr32b128k
teewr32b256k
Longword-write to FlexRAM execution time:
32 KB EEPROM backup
64 KB EEPROM backup
128 KB EEPROM backup
256 KB EEPROM backup
—
TBD
2.7
TBD
3.7
ms
1. Assumes 25MHz flash clock frequency.
2. Maximum times for erase parameters based on expectations at cycling end-of-life.
3. For byte-writes to an erased FlexRAM location, the aligned word containing the byte must be erased.
6.4.1.3 Flash (FTFL) current and power specfications
Table 20. Flash (FTFL) current and power specfications
Symbol
Description
Typ.
Unit
IDD_PGM
Worst case programming current in program flash
10
mA
6.4.1.4 Reliability specifications
Table 21. NVM reliability specifications
Symbol
Description
Min.
Typ.1
Max.
Unit
Notes
Program Flash
tnvmretp10k Data retention after up to 10 K cycles
5
TBD
—
years
tnvmretp1k Data retention after up to 1 K cycles
10
TBD
—
years
tnvmretp100 Data retention after up to 100 cycles
15
TBD
—
years
nnvmcycp
Cycling endurance
10 K
TBD
—
cycles
Data Flash
tnvmretd10k Data retention after up to 10 K cycles
5
TBD
—
years
Table continues on the next page...
Peripheral operating requirements and behaviors
K60 Sub-Family Data Sheet Data Sheet, Rev. 4, 3/2011.
Freescale Semiconductor, Inc.
Preliminary
33
相关PDF资料 |
PDF描述 |
|---|---|
| MK60X256VLQ100 | FLASH, 100 MHz, RISC MICROCONTROLLER, PQFP144 |
| MK60N512VMD100R | FLASH, 100 MHz, RISC MICROCONTROLLER, PBGA144 |
| MK60X256VLQ100R | FLASH, 100 MHz, RISC MICROCONTROLLER, PQFP144 |
| MK60N512VMC100 | FLASH, 100 MHz, RISC MICROCONTROLLER, PBGA121 |
| MK60N256VMC100 | FLASH, 100 MHz, RISC MICROCONTROLLER, PBGA121 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MK60N256VMD100 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:Up to 100 MHz ARM Cortex-M4 core with DSP instructions delivering 1.25 Dhrystone MIPS per MHz |
| MK60N512VLL100 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:K60 Sub-Family Data Sheet |
| MK60N512VLQ100 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:Up to 100 MHz ARM Cortex-M4 core with DSP instructions delivering 1.25 Dhrystone MIPS per MHz |
| MK60N512VMD100 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:Up to 100 MHz ARM Cortex-M4 core with DSP instructions delivering 1.25 Dhrystone MIPS per MHz |
| MK60R4F-R52 | 功能描述:金属膜电阻器 - 透孔 1/4watt 6.4ohm 1% RoHS:否 制造商:IRC 电阻:63.4 kOhms 容差:1 % 功率额定值:100 mW 电压额定值:200 V 温度系数:100 PPM / C 端接类型:Axial 工作温度范围: 尺寸:2.3 mm Dia. x 6.4 mm L 封装:Bulk |
发布紧急采购，3分钟左右您将得到回复。