参数资料
型号: MKP1V240RL
厂商: ON Semiconductor
文件页数: 4/5页
文件大小: 0K
描述: SIDAC BIDIR 0.9A 240V DO-41
标准包装: 5,000
电流 - 峰值输出: 900mA
电压 - 击穿: 220 ~ 250V
电流 - 维持(Ih): 100mA
电流 - 击穿: 35µA
封装/外壳: DO-204AL,DO-41,轴向
供应商设备封装: 轴向
包装: 带卷 (TR)
MKP1V120 Series
THERMAL CHARACTERISTICS
1.0
0.7
0.5
The temperature of the lead should be
0.3
0.2
measured using a thermocouple placed on the
lead as close as possible to the tie point. The
0.1
0.07
0.05
0.03
0.02
0.01
Z q JL (t) = R q JL ? r(t)
D T JL = P pk R q JL [r(t)]
where: t p TIME
D T JL = the increase in junction temperature above the
lead temperature
r(t) = normalized value of transient thermal resistance at
time, t from this figure. For example,
r(t p ) = normalized value of transient resistance at time t p .
thermal mass connected to the tie point is
normally large enough so that it will not
significantly respond to heat surges generated
in the diode as a result of pulsed operation
once steady-state conditions are achieved.
Using the measured value of T L , the junction
temperature may be determined by:
T J = T L + D T JL
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
500
1.0 k
2.0 k
5.0 k
10 k
t, TIME (ms)
Figure 5. Thermal Response
1.4
1.0
0.9
0.8
1.2
1.0
0.8
0.6
0.4
-60
-40
-20
0
20
40
60
80
100
120
140
-60
-40
-20
0
20
40
60
80
100
120
140
T J , JUNCTION TEMPERATURE ( ° C)
Figure 6. Typical Breakover Voltage
100
T J , JUNCTION TEMPERATURE ( ° C)
Figure 7. Typical Holding Current
10
I PK
10%
tw
1.0
0.1
1.0
10
100
t w , PULSE WIDTH (ms)
Figure 8. Pulse Rating Curve
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4
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