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参数资料
| 型号： | ML925B11F-05 |
| 元件分类： | 激光器 |
| 英文描述： | 1530 nm, LASER DIODE |
| 封装： | HERMETIC SEALED, TO-CAN PACKAGE-4 |
| 文件页数： | 1/3页 |
| 文件大小： | 165K |
| 代理商： | ML925B11F-05 |
MITSUBISHI LASER DIODES
ML9XX11,ML9XX16,ML9XX22 SERIES
Notice : Some parametric limits are subject to change
InGaAsP DFB LASER DIODES
Dec. 2004
MITSUBISHI
ELECTRIC
TYPE
NAME
DESCRIPTION
ML9XX11, ML9XX16 and ML9XX22 series are DFB
(Distributed Feedback) laser diodes
emitting
light
beam with emission wavelength of 1470 ~ 1610 nm.
They are well suited for light source in long
distance
digital
transmission application of coarse
WDM.
They are hermetically sealed
devices with the photo
diode for optical output monitoring.
APPLICATION
~1.25Gbps
digital transmission system
Coarse WDM application
FEATURES
Homogeneous grating (AR/HR facet coating) structure
DFB
Wide temperature range operation ( 0 to 85C )
Low
threshold current (typical 8mA)
High speed response (typical 0.1nsec)
8 wavelength with 20nm space at 1470 ~ 1610nm
φ5.6mm TO-CAN package
Flat window cap, or Aspherical lens cap
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Conditions
Ratings
Unit
Po
Light output power
CW
10
mW
If
Forward current (Laser diode)
---
150
mA
VRL
Reverse voltage (Laser diode)
---
2
V
VRD
Reverse voltage (Photo diode)
---
20
V
IFD
Forward current (Photo diode)
---
2
mA
Tc
Case temperature
---
0 to +85
C
Tstg
Storage temperature
---
-40 to +100
C
ELECTRICAL/OPTICAL CHARACTERISTICS (Tc=25C otherwise specified)
[ Flat window cap ; ML925B11F/ML925B16F/ML925B22F/ ML920J11S/ML920J16S/ML920J22S ]
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
CW
---
8
15
Ith
Threshold current
CW, Tc=85
C
---
30
50
mA
CW, Po=5mW
---
25
40
Iop
Operation current
CW, Po=5mW, Tc=85
C
---
60
80
mA
Vop
Operating voltage
CW, Po=5mW
---
1.1
1.5
V
η
Slope efficiency
CW, Po=5mW
0.20
0.28
---
mW/mA
λp
Peak wavelength
CW, Po=5mW
<**>
nm
θ //
Beam divergence angle (parallel)
CW, Po=5mW
---
25
35
deg.
θ ┴
Beam divergence angle
(perpendicular)
CW, Po=5mW
---
35
45
deg.
SMSR
Side mode suppression ratio
CW, Po=5mW
Tc= 0 to +85
C
35
40
---
dB
tr,tf
Rise and Fall time
Ib=Ith, 20-80% <*>
---
0.1
0.2
ns
Im
Monitoring output current (PD)
CW, Po=5mW
0.05
0.2
---
mA
Id
Dark current (PD)
VRD=5V
---
0.1
A
Ct
Capacitance (PD)
VRD=5V
---
10
20
pF
<*> Except influence of the 18mm lead.
ML925B11F / ML925B16F / ML925B22F
ML920J11S / ML920J16S / ML920J22S
ML925J11F / ML925J16F / ML925J22F
ML920L11S / ML920L16S / ML920L22S
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相关代理商/技术参数 |
参数描述 |
|---|---|
| ML925B11F-06 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:InGaAsP DFB LASER DIODES |
| ML925B16F | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:InGaAsP DFB LASER DIODES |
| ML925B16F-04 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:InGaAsP DFB LASER DIODES |
| ML925B16F-05 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:InGaAsP DFB LASER DIODES |
| ML925B22F | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:InGaAsP DFB LASER DIODES |
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