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参数资料
| 型号： | ML9SM11-02-22 |
| 元件分类： | 激光器 |
| 英文描述： | 1544 nm, LASER DIODE |
| 文件页数： | 1/3页 |
| 文件大小： | 118K |
| 代理商： | ML9SM11-02-22 |
MITSUBISHI LASER DIODES
ML9XX11/ML9XX22 SERIES
2.5Gbps DWDM InGaAsP DFB-LASER DIODE
TYPE
NAME
ML9SM11/ML9SM22
DESCRIPTION
ML9XX11 and ML9XX22 series are DWDM 2.5Gbps directly
modulated DFB (Distributed Feedback) laser diodes.
ML9XX11 and ML9XX22 are suitable light sources for 2.5Gbps
DWDM transmission in C-band and L-band wavelength ranges
respectively. Wavelength can be chosen with 0.8nm spacing
according to ITU-T grid. Maximum 175km transmission distance
can be achievable.
ML9XX11 and ML9XX22 are supplied with the chip-on-carrier
type package.
FEATURES
Available distance: 175km (Max)
High power operation: 10mW
High - side mode suppression ratio: 45dB (typ)
High speed response (tr/tf): 120psec (typ)
*1) Specification Note
APPLICATION
2.5Gbps DWDM transmission system
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Conditions
Ratings
Unit
Po
Optical output power
CW
20
mW
IF
Operating current
-
150
mA
VRL
Reverse voltage
-
2
V
Tsld
Soldering temperature
1 mimute
320
°C
Tc
Case temperature
-
+15 to +35
°C
Tstg
Storage temperature
-
-40 to +100
°C
ELECTRICAL/OPTICAL CHARACTERISTICS (Tc=25
°C)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Ith
Threshold current
CW
-
10
35
mA
Iop
Operation current
CW, Po=10mW
-
45
85
mA
Vop
Operating voltage
CW, Po=10mW
-
1.2
1.8
V
η
Slope efficiency
CW, Po=10mW
0.15
0.3
-
mW/mA
λp
Peak wavelength
CW, Po=10mW
-0.5
code list
+0.3
nm
θ//
Beam divergence angle (parallel)
CW, Po=10mW
-
28
35
deg.
θ⊥
Beam divergence angle
(perpendicular)
CW, Po=10mW
-
30
45
deg.
tr,tf
Rise and fall time (10%-90%)
-
120
200
psec
SMSR
Side mode suppression ratio
2.5Gbps, NRZ, PRBS 223-1
Imod=40mApp, Ex=10dB
35
45
-
dB
Pp
Dispersion penalty
ditto
SMF @BER=10-10
Transmission Distance: *1
-
2.0
dB
MITSUBISHI
ELECTRIC
Aug. 2005
Notice: Some parametric limits are subject to change.
Type
Transmission Distance
ML9SM11-02/ML9SM22-02
100km
ML9SM22-03
150km
ML9SM11-03
175km
相关PDF资料 |
PDF描述 |
|---|---|
| ML9SM11-02-39 | 1557 nm, LASER DIODE |
| ML9SM22-02-37 | 1595 nm, LASER DIODE |
| ML9SM31-02-22 | 1546 nm, LASER DIODE |
| MLA2566-102B1 | 15500 MHz - 16500 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER |
| MLA2566-102B2 | 15500 MHz - 16500 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER |
相关代理商/技术参数 |
参数描述 |
|---|---|
| ML9SM11-03 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:2.5Gbps DWDM InGaAsP DFB-LASER DIODE |
| ML9SM22 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:2.5Gbps DWDM InGaAsP DFB-LASER DIODE |
| ML9SM22-02 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:2.5Gbps DWDM InGaAsP DFB-LASER DIODE |
| ML9SM22-03 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:2.5Gbps DWDM InGaAsP DFB-LASER DIODE |
| ML9SM31 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:InGaAsP DFB-LASER DIODE WITH EA MODULATOR |
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