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参数资料
| 型号： | MLD685D |
| 厂商： | SANKEN ELECTRIC CO LTD |
| 元件分类： | JFETs |
| 英文描述： | 85 A, 60 V, 0.0047 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | MT100, TO-3P, 3 PIN |
| 文件页数： | 1/7页 |
| 文件大小： | 351K |
| 代理商： | MLD685D |
http://www.sanken-ele.co.jp
SANKEN ELECTRIC
ＭＬＤ６８５Ｄ
Feb. 2011
The information included herein is believed to be accurate and reliable. However, SANKEN ELECTRIC CO., LTD assumes no
responsibility for its use ; nor for any infringements of patents or other rights of third parties that may result from its use.
Copy Right: SANKEN ELECTRIC CO.,LTD.
Page 1
Features
Low on-state resistance
Built-in gate protection diode
Package
MT100 (TO3P)
Applications
Electric power steering
High current switching
Internal Equivalent Circuit
Key Specifications
V(BR)DSS=60V (ID=100μA)
RDS(ON)=4.7m Max. (VGS=10V,ID=42A)
Absolute maximum ratings
Characteristic
Symbol
Rating
Unit
Drain to Source Voltage
VDSS
60
V
Gate to Source Voltage
VGSS
±20
V
Continuous Drain Current
ID
±
85
A
Pulsed Drain Current
ID(pulse) ※１
±
280
A
Maximum Power Dissipation
PD
150 (Tc=25℃ )
W
Single Pulse Avalanche Energy
EAS ※2
280
mJ
Channel Temperature
Tch
-55~150
°C
Storage Temperature
Tstg
-55~150
°C
※
1 PW≦100μsec. duty cycle≦1％
※
2 VDD=20V, L=1mH, IL=20A, unclamped, See Fig.1
Ｇ
(1)
Ｓ
(3)
Ｄ
(2)
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