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参数资料
| 型号： | MLN1030S |
| 厂商： | ADVANCED SEMICONDUCTOR INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator |
| 中文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 文件页数： | 1/1页 |
| 文件大小： | 18K |
| 代理商： | MLN1030S |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25
O
C
SYMBOL
BV
CBO
I
C
= 1 mA
BV
CEO
I
C
= 1 mA
BV
EBO
I
E
= 1 mA
I
CBO
V
CB
= 24 V
h
FE
V
CE
= 5.0 V I
C
= 100 mA
NONE
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
40
28
3.5
20
UNITS
V
V
V
mA
---
0.5
120
C
OB
V
CB
= 28 V
f = 1.0 MHz
5.0
pF
P
G
V
CE
= 20 V
P
OUT
= 1.0 W
I
CQ
= 150 mA f = 1.0 GHz
9.0
dB
NPN SILICON RF POWER TRANSISTOR
MLN1030S
DESCRIPTION:
The
ASI MLN1030S
is Designed for
FEATURES:
Omnigold
Metalization System
MAXIMUM RATINGS
I
C
0.250 A
V
CBO
40 V
V
CEO
28 V
V
EBO
3.5 V
P
DISS
7.0 W @ T
C
= 25
O
C
-65
O
C to +200
O
C
T
J
T
STG
-65
O
C to +150
O
C
θ
JC
20
O
C/W
PACKAGE STYLE .280 4L STUD
ORDER CODE: ASI10623
MINIMUM
inches / mm
.003 / 0.08
.117 / 2.97
.270 / 6.86
B
C
D
E
F
G
A
MAXIMUM
inches / mm
.285 / 7.24
.137 / 3.48
.007 / 0.18
H
I
J
.245 / 6.22
.255 / 6.48
DIM
1.010 / 25.65
.220 / 5.59
1.055 / 26.80
.230 /5.84
.217 / 5.51
K
.175 / 4.45
.285 / 7.24
.275 / 6.99
.572 / 14.53
.130 / 3.30
.640 / 16.26
G
K
H
F
E
D
C
B
45°
A
#8-32 UNC
I
J
S
S
D
G
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