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| 型号： | MM54C10J/883 |
| 厂商： | NATIONAL SEMICONDUCTOR CORP |
| 元件分类： | 门电路 |
| 英文描述： | CMOS SERIES, TRIPLE 3-INPUT NAND GATE, CDIP14 |
| 封装： | CERAMIC, DIP-14 |
| 文件页数： | 3/6页 |
| 文件大小： | 146K |
| 代理商： | MM54C10J/883 |
AC Electrical Characteristics TA e 25 C CL e 50 pF unless otherwise specified
Symbol
Parameter
Conditions
Min
Typ
Max
Units
MM54C00MM74C00 MM54C02MM74C02 MM54C04MM74C04
tpd0 tpd1
Propagation Delay Time to
VCC e 50V
50
90
ns
Logical ‘‘1’’ or ‘‘0’’
VCC e 10V
30
60
ns
CIN
Input Capacitance
(Note 2)
60
pF
CPD
Power Dissipation Capacitance
(Note 3) Per Gate or Inverter
12
pF
MM54C10MM74C10
tpd0 tpd1
Propagation Delay Time to
VCC e 50V
60
100
ns
Logical ‘‘1’’ or ‘‘0’’
VCC e 10V
35
70
ns
CIN
Input Capacitance
(Note 2)
70
pF
CPD
Power Dissipation Capacitance
(Note 3) Per Gate
18
pF
MM54C20MM74C20
tpd0 tpd1
Propagation Delay Time to
VCC e 50V
70
115
ns
Logical ‘‘1’’ or ‘‘0’’
VCC e 10V
40
80
ns
CIN
Input Capacitance
(Note 2)
9
pF
CPD
Power Dissipation Capacitance
(Note 3) Per Gate
30
pF
AC Parameters are guaranteed by DC correlated testing
Note 1
‘‘Absolute Maximum Ratings’’ are those values beyond which the safety of the device cannot be guaranteed Except for ‘‘Operating Temperature Range’’
they are not meant to imply that the devices should be operated at these limits The table of ‘‘Electrical Characteristics’’ provides conditions for actual device
operation
Note 2
Capacitance is guaranteed by periodic testing
Note 3
CPD determines the no load AC power consumption of any CMOS device For complete explanation see 54C74C Family Characteristics Application
NoteAN-90
Typical Performance Characteristics
Gate Transfer Characteristics
Over Temperature vs VCC
Guaranteed Noise Margin
Power Dissipation vs Frequency
MM54C02MM74C02
MM54C00MM74C00
MM54C04MM74C04
TLF5877 – 6
3
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| MM54C151/M WAF | 制造商:Texas Instruments 功能描述: |
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