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参数资料
| 型号： | MM54HC20N |
| 厂商： | National Semiconductor Corporation |
| 英文描述： | Dual 4-Input NAND Gate |
| 中文描述： | 双4输入与非门 |
| 文件页数： | 3/4页 |
| 文件大小： | 123K |
| 代理商： | MM54HC20N |
AC Electrical Characteristics
V
CC
e
5V, T
A
e
25
§
C, C
L
e
15 pF, t
r
e
t
f
e
6 ns
Symbol
Parameter
Conditions
Typ
Guaranteed
Limit
Units
t
PHL
, t
PLH
Maximum Propagation
Delay
8
15
ns
AC Electrical Characteristics
V
CC
e
2.0V to 6.0V, C
L
e
50 pF, t
r
e
t
f
e
6 ns (unless otherwise specified)
T
A
e
25
§
C
74HC
54HC
Symbol
Parameter
Conditions
V
CC
T
A
eb
40 to 85
§
C
Guaranteed Limits
T
A
eb
55 to 125
§
C
Units
Typ
t
PHL
, t
PLH
Maximum Propagation
Delay
2.0V
4.5V
6.0V
45
9
8
90
18
15
113
23
19
134
27
23
ns
ns
ns
t
TLH
, t
THL
Maximum Output Rise
and Fall Time
2.0V
4.5V
6.0V
30
8
7
75
15
13
95
19
16
110
22
19
ns
ns
ns
C
PD
Power Dissipation
Capacitance (Note 5)
(per gate)
20
pF
C
IN
Maximum Input
Capacitance
5
10
10
10
pF
Note 5:
C
PD
determines the no load dynamic power consumption, P
D
e
C
PD
V
CC2
f
a
I
CC
V
CC
, and the no load dynamic current consumption, I
S
e
C
PD
V
CC
f
a
I
CC
.
3
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