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参数资料
| 型号： | MM54HCT08J/883 |
| 厂商： | NATIONAL SEMICONDUCTOR CORP |
| 元件分类： | 门电路 |
| 英文描述： | HCT SERIES, QUAD 2-INPUT AND GATE, CDIP14 |
| 封装： | CERAMIC, DIP-14 |
| 文件页数： | 2/4页 |
| 文件大小： | 105K |
| 代理商： | MM54HCT08J/883 |
Absolute Maximum Ratings (Notes12)
If MilitaryAerospace specified devices are required
please contact the National Semiconductor Sales
OfficeDistributors for availability and specifications
Supply Voltage (VCC)
b
05 to a70V
DC Input Voltage (VIN)
b
15 to VCC a15V
DC Output Voltage (VOUT)
b
05 to VCC a05V
Clamp Diode Current (IIK IOK)
g
20 mA
DC Output Current per pin (IOUT)
g
25 mA
DC VCC or GND Current per pin (ICC)
g
50 mA
Storage Temperature Range (TSTG)
b
65 Cto a150 C
Power Dissipation (PD)
(Note 3)
600 mW
SO Package only
500 mW
Lead Temperature (TL) (Soldering 10 seconds)
260 C
Operating Conditions
Min
Max
Units
Supply Voltage (VCC)
45
55
V
DC Input or Output Voltage
0
VCC
V
(VIN VOUT)
Operating Temperature Range (TA)
MM74HCT
b
40
a
85
C
MM54HCT
b
55
a
125
C
Input Rise or Fall Times
(tr tf)
500
ns
DC Electrical Characteristics VCCe5V g10% (unless otherwise specified)
TAe25 C
74HCT
54HCT
Symbol
Parameter
Conditions
TAeb40 to 85 CTAeb55 to 125 C Units
Typ
Guaranteed Limits
VIH
Minimum High Level
20
V
Input Voltage
VIL
Maximum Low Level
08
V
Input Voltage
VOH
Minimum High Level
VINeVIH or VIL
Output Voltage
lIOUTle20 mAVCC VCCb01
VCCb01
V
lIOUTle40 mA VCCe45V
42
398
384
37
V
lIOUTle48 mA VCCe55V
52
498
484
47
V
VOL
Maximum Low Level
VINeVIH
Voltage
lIOUTle20 mA
0
01
V
lIOUTle40 mA VCCe45V
02
026
033
04
V
lIOUTle48 mA VCCe55V
02
026
033
04
V
IIN
Maximum Input
VINeVCC or GND VIH or VIL
g
01
g
10
g
10
m
A
Current
ICC
Maximum Quiescent
VINeVCC or GND
20
40
m
A
Supply Current
IOUTe0 mA
VINe24V or 05V (Note 4)
12
14
15
mA
Note 1
Absolute Maximum Ratings are those values beyond which damage to the device may occur
Note 2
Unless otherwise specified all voltages are referenced to ground
Note 3
Power Dissipation temperature derating
plastic ‘‘N’’ package b12 mW C from 65 Cto85 C ceramic ‘‘J’’ package 12 mW C from 100 Cto125 C
Note 4
This is measured per input with all other inputs held at VCC or ground
2
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