参数资料
型号: MM54HCT151J
厂商: NATIONAL SEMICONDUCTOR CORP
元件分类: 通用总线功能
英文描述: 8-Channel Digital Multiplexer
中文描述: HCT SERIES, 8 LINE TO 1 LINE MULTIPLEXER, COMPLEMENTARY OUTPUT, CDIP16
封装: CERAMIC, DIP-16
文件页数: 2/4页
文件大小: 137K
代理商: MM54HCT151J
Absolute Maximum Ratings
(Notes 1 & 2)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales
Office/Distributors for availability and specifications.
Supply Voltage (V
CC
)
DC Input Voltage (V
IN
)
DC Output Voltage (V
OUT
)
Clamp Diode Current (I
IK
, I
OK
)
DC Output Current, per Pin (I
OUT
)
DC V
CC
or GND Current, per Pin (I
CC
)
Storage Temperature Range (T
STG
)
Power Dissipation (P
D
)
(Note 3)
S.O. Package only
b
0.5V to
a
7.0V
b
1.5V to V
CC
a
1.5V
b
0.5V to V
CC
a
0.5V
g
20 mA
g
25 mA
g
50 mA
b
65
§
C to
a
150
§
C
600 mW
500 mW
Lead Temperature (T
L
)
(Soldering, 10 seconds)
260
§
C
Operating Conditions
Min
4.5
Max
5.5
Units
V
Supply Voltage (V
CC
)
DC Input or Output Voltage
(V
IN
, V
OUT
)
Operating Temp. Range (T
A
)
MM74HCT
MM54HCT
0
V
CC
V
b
40
b
55
a
85
a
125
§
C
§
C
Input Rise or Fall Times
(t
r
, t
f
)
500
ns
DC Electrical Characteristics
(Note 4)
T
A
e
25
§
C
74HCT
54HCT
Symbol
Parameter
Conditions
V
CC
T
A
e b
40
§
C to
a
85
§
C T
A
e b
55
§
C to
a
125
§
CUnits
Guaranteed Limits
Typ
V
IH
Minimum High Level
Input Voltage
2.0
2.0
2.0
V
V
IL
Maximum Low Level
Input Voltage
0.8
0.8
0.8
V
V
OH
Minimum High Level V
IN
e
V
IH
or V
IL
Output Voltage
l
I
OUT
l
s
20
m
A
V
IN
e
V
IH
or V
IL
l
I
OUT
l
s
4.0 mA
l
I
OUT
l
s
4.8 mA
4.5V
4.4
4.4
4.4
V
4.5V 4.2 3.98
5.5V 5.2 4.98
3.84
4.84
3.7
4.7
V
V
V
OL
Maximum Low Level V
IN
e
V
IH
or V
IL
Output Voltage
l
I
OUT
l
e
20
m
A
l
I
OUT
l
e
4.0 mA
l
I
OUT
l
e
4.8 mA
V
IN
e
V
CC
or GND
0
0.1
0.1
0.33
0.33
0.1
0.4
0.4
V
V
V
4.5V 0.2 0.26
5.5V 0.2 0.26
I
IN
Maximum Input
Current
6.0V
g
0.1
g
1.0
g
1.0
m
A
I
CC
Maximum Quiescent V
IN
e
V
CC
or GND
Supply Current
8.0
80
160
m
A
I
OUT
e
0
m
A
V
IN
e
2.4V or 0.5V (Note 4)
0.25 0.4
0.55
0.65
mA
Note 1:
Absolute Maximum Ratings are those values beyond which damage to the device may occur.
Note 2:
Unless otherwise specified all voltages are referenced to ground.
Note 3:
Power Dissipation temperature derating D plastic ‘‘N’’ package:
b
12 mW/
§
C from 65
§
C to 85
§
C; ceramic ‘‘J’’ package:
b
12 mW/
§
C from 100
§
C to 125
§
C.
Note 4:
For a power supply of 5V
g
10% the worst case output voltages (V
OH
, and V
OL
) occur for HCT at 4.5V. Thus the 4.5V values should be used when
designing with this supply. Worst case V
IH
and V
IL
occur at V
CC
e
5.5V and 4.5V respectively. (The V
IH
value at 5.5V is 3.85V.) The worst case leakage current
(I
IN
, I
CC
, and I
OZ
) occur for CMOS at the higher voltage and so the 6.0V values should be used.
2
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