参数资料
型号: MM74C04
厂商: National Semiconductor Corporation
英文描述: Hex Inverter(六路反相器)
中文描述: 十六进制逆变器(六路反相器)
文件页数: 3/6页
文件大小: 146K
代理商: MM74C04
AC Electrical Characteristics
*
T
A
e
25
§
C, C
L
e
50 pF, unless otherwise specified
Symbol
Parameter
Conditions
Min
Typ
Max
Units
MM54C00/MM74C00, MM54C02/MM74C02, MM54C04/MM74C04
t
pd0
, t
pd1
Propagation Delay Time to
Logical ‘‘1’’ or ‘‘0’’
V
CC
e
5.0V
50
90
ns
V
CC
e
10V
30
60
ns
C
IN
Input Capacitance
(Note 2)
6.0
pF
C
PD
Power Dissipation Capacitance
(Note 3) Per Gate or Inverter
12
pF
MM54C10/MM74C10
t
pd0
, t
pd1
Propagation Delay Time to
Logical ‘‘1’’ or ‘‘0’’
V
CC
e
5.0V
60
100
ns
V
CC
e
10V
35
70
ns
C
IN
Input Capacitance
(Note 2)
7.0
pF
C
PD
Power Dissipation Capacitance
(Note 3) Per Gate
18
pF
MM54C20/MM74C20
t
pd0
, t
pd1
Propagation Delay Time to
Logical ‘‘1’’ or ‘‘0’’
V
CC
e
5.0V
70
115
ns
V
CC
e
10V
40
80
ns
C
IN
Input Capacitance
(Note 2)
9
pF
C
PD
*
AC Parameters are guaranteed by DC correlated testing.
Power Dissipation Capacitance
(Note 3) Per Gate
30
pF
Note 1:
‘‘Absolute Maximum Ratings’’ are those values beyond which the safety of the device cannot be guaranteed. Except for ‘‘Operating Temperature Range’’
they are not meant to imply that the devices should be operated at these limits. The table of ‘‘Electrical Characteristics’’ provides conditions for actual device
operation.
Note 2:
Capacitance is guaranteed by periodic testing.
Note 3:
C
PD
determines the no load AC power consumption of any CMOS device. For complete explanation see 54C/74C Family Characteristics Application
NoteDAN-90.
Typical Performance Characteristics
Gate Transfer Characteristics
Over Temperature vs V
CC
Guaranteed Noise Margin
Power Dissipation vs Frequency
MM54C00/MM74C00,
MM54C02/MM74C02,
MM54C04/MM74C04
TL/F/5877–6
3
相关PDF资料
PDF描述
MM54C10 Triple 3-Input NAND Gate(三路三输入与非门)
MM74C10 Triple 3-Input NAND Gate(三路三输入与非门)
MM74C20 Dual 4-Input NAND Gate(双通道四输入与非门)
MM54C221 Dual Monostable Multivibrator
MM54C221J Dual Monostable Multivibrator
相关代理商/技术参数
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