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型号： MM908E621ACDWB
厂商： Freescale Semiconductor
文件页数： 3/60页
文件大小： 0K
描述： IC QUAD HALF BRDG TRPL SW 54SOIC
标准包装： 26
应用： 自动镜像控制
核心处理器： HC08
程序存储器类型： 闪存（16 kB）
控制器系列： 908E
RAM 容量： 512 x 8
接口： SCI，SPI
输入/输出数： 12
电源电压： 9 V ~ 16 V
工作温度： -40°C ~ 85°C
安装类型： 表面贴装
封装/外壳： 54-BSSOP（0.295"，7.50mm 宽）裸露焊盘
包装： 管件
供应商设备封装： 54-SOICW-EP
Analog Integrated Circuit Device Data
Freescale Semiconductor
11
908E621
ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
HIGH SIDE OUTPUTS HS2 AND HS3(18)
Switch On Resistance
TJ = 25 °C, ILOAD = 1.0 A
RDS(ON)-HS23
–440
500
m
Ω
Over-current Shutdown
IHSOC23
3.6
–
5.6
A
Over-current Shutdown blanking time(16)
tOCB
–4-8
–
s
Current to Voltage Ratio(17)
VADOUT [V] / IHS [A], (measured and trimmed IHS = 2.0 A)
CRRATIOHS23
1.16
1.66
2.16
V/A
High Side Switching Frequency(16)
fPWMHS
––
25
kHz
High Side Freewheeling Diode Forward Voltage
TJ = 25 °C, ILOAD = 1.0 A
VHSF
–0.9
–
V
Leakage Current
ILEAKHS
–<0.2
10
A
HALF-BRIDGE OUTPUTS HB1 AND HB2
Switch On Resistance
High Side, TJ = 25°C, ILOAD = 1.0A
Low Side, TJ = 25°C, ILOAD = 1.0A
RDS(ON)-HB12
–
750
900
m
Ω
Over-current Shutdown
High Side
Low Side
IHBOC12
1.0
–
1.5
A
Over-current Shutdown blanking time(19)
tOCB
–4-8
–
μs
Switching Frequency(19)
fPWM
––
25
kHz
Freewheeling Diode Forward Voltage
High Side, TJ = 25 °C, ILOAD = 1.0 A
Low Side, TJ = 25 °C, ILOAD = 1.0 A
VHSF
VLSF
–
0.9
–
V
Leakage Current
ILEAKHB
–<0.2
10
A
Low Side Current to Voltage Ratio(20)
VADOUT [V] / IHB [A], CSA = 1, (measured and trimmed IHB = 200 mA)
VADOUT [V] / IHB [A], CSA = 0, (measured and trimmed IHB = 500 mA)
CRRATIOHB12
17.5
3.5
25.0
5.0
32.5
6.5
V/A
Notes
16.
This parameter is guaranteed by process monitoring but is not production tested.
17.
This parameter is guaranteed only if correct trimming was applied.
18.
The high side HS3 can be only used for resistive loads.
19.
This parameter is guaranteed by process monitoring but is not production tested.
20.
This parameter is guaranteed only if correct trimming was applied
Table 3. Static Electrical Characteristics (continued)
All characteristics are for the analog chip only. Refer to the 68HC908EY16 datasheet for characteristics of the microcontroller
chip. Characteristics noted under conditions 9.0 V ≤ VSUP ≤ 16 V, -40 °C ≤ TJ ≤ 125 °C, unless otherwise noted. Typical values
noted reflect the approximate parameter mean at TA = 25 °C under nominal conditions, unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
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