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参数资料
| 型号： | MMBD101L |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 射频混频器 |
| 英文描述： | SILICON, UHF BAND, MIXER DIODE, TO-236AB |
| 封装： | PLASTIC, CASE 318-08, 3 PIN |
| 文件页数： | 2/8页 |
| 文件大小： | 53K |
| 代理商： | MMBD101L |
MBD101 MMBD101LT1
http://onsemi.com
2
TYPICAL CHARACTERISTICS
(TA = 25°C unless noted)
Figure 1. Reverse Leakage
TA, AMBIENT TEMPERATURE (°C)
Figure 2. Forward Voltage
VF, FORWARD VOLTAGE (VOLTS)
Figure 3. Capacitance
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Noise Figure
PLO, LOCAL OSCILLATOR POWER (mW)
,FOR
W
ARD
CURRENT
(mA)
I F
,REVERSE
LEAKAGE
(
A)
I R
m
0.1
0.2
0.5
2.0
1.0
10
11
3.0
0
1.0
2.0
3.0
4.0
1.0
0.9
0.8
0.7
0.6
0.3
0.4
100
0.1
30
40
50
60
70
80
100
0.1
130
110 120
90
0.07
0.05
0.02
1.0
2.0
0.5
0.6
0.7
0.01
1.0
0.7
0.5
10
1.0
Figure 5. Noise Figure Test Circuit
UHF
NOISE SOURCE
H.P. 349A
DIODE IN
TUNED
MOUNT
LOCAL
OSCILLATOR
IF AMPLIFIER
NF = 1.5 dB
f = 30 MHz
NOISE
FIGURE METER
H.P. 342A
NOTES ON TESTING AND SPECIFICATIONS
Note 1 — CC and CT are measured using a capacitance bridge
(Boonton Electronics Model 75A or equivalent).
Note 2 — Noise figure measured with diode under test in tuned
diode mount using UHF noise source and local oscillator
(LO) frequency of 1.0 GHz. The LO power is adjusted
for 1.0 mW. IF amplifier NF = 1.5 dB, f = 30 MHz, see
Figure 5.
Note 3 — LS is measured on a package having a short instead of a
die, using an impedance bridge (Boonton Radio Model
250A RX Meter).
0.2
VR = 3.0 Vdc
5.0
4.0
7.0
6.0
9.0
8.0
10
LOCAL OSCILLATOR FREQUENCY = 1.0 GHz
(TEST CIRCUIT IN FIGURE 5)
5.0
TA = 25°C
TA = -40°C
TA = 85°C
NF
,NOISE
FIGURE
(dB)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMBD101LT1 | 功能描述:肖特基二极管与整流器 7V 225mW Single RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MMBD101LT1G | 功能描述:肖特基二极管与整流器 7V 225mW Single RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MMBD101TS | 制造商:PANJIT 制造商全称:Pan Jit International Inc. 功能描述:SURFACE MOUNT HIGH FREQUENCY SCHOTTKY DIODE |
| MMBD101W | 制造商:PANJIT 制造商全称:Pan Jit International Inc. 功能描述:SURFACE MOUNT HIGH FREQUENCY SCHOTTKY DIODE |
| MMBD101WS | 制造商:PANJIT 制造商全称:Pan Jit International Inc. 功能描述:SURFACE MOUNT HIGH FREQUENCY SCHOTTKY DIODE |
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