参数资料
型号: MMBD1401AL99Z
厂商: FAIRCHILD SEMICONDUCTOR CORP
元件分类: 参考电压二极管
英文描述: 0.2 A, SILICON, SIGNAL DIODE
文件页数: 2/5页
文件大小: 51K
代理商: MMBD1401AL99Z
MMBD1401A
/
1403A
/
1404A
/
1405A
MMBD1401A-1405A, Rev. A
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Max
Units
BV
Breakdown Voltage
IR = 100
A
250
V
IR
Reverse Current
VR = 120 V
VR = 175 V
40
100
nA
VF
Forward Voltage
MMBD1401A / 1403A
MMBD1404A / 1405A
MMBD1401A / 1403A
MMBD1404A / 1405A
IF = 10 mA
IF = 50 mA
IF = 200 mA
IF = 300 mA
760
800
920
1.1
1.0
1.25
1.1
mV
V
CO
Diode Capacitance
VR = 0, f = 1.0 MHz
2.0
pF
TRR
Reverse Recovery Time
IF = IR = 30 mA,
IRR = 1.0 mA, RL = 100
50
nS
Typical Characteristics
REVERSE VOLTAGE vs REVERSE CURRENT
BV - 1.0 to 100 uA
3
5
10
20
30
50
100
275
300
325
I - REVERSE CURRENT (uA)
V
-
R
EVER
SE
VO
L
T
A
G
E
(V)
R
Ta= 25°C
REVERSE CURRENT vs REVERSE VOLTAGE
IR - 55 to 205 V
GENERAL RULE: The Reverse Current of a diode will approximately
double for every ten (10) Degree C increase in Temperature
55
75
95
115
135
155 175 195
0
10
20
30
40
50
V
- REVERSE VOLTAGE (V)
I
-
REVER
SE
C
URR
EN
T
(n
A
)
R
Ta= 25°C
REVERSE CURRENT vs REVERSE VOLTAGE
IR - 180 to 255 V
GENERAL RULE: The Reverse Current of a diode will approximately
double for every ten Degree C increase in Temperature
180
200
220
240
20
30
40
50
60
70
80
90
100
V
- REVERSE VOLTAGE (V)
I
-
R
EVERSE
C
URR
ENT
(nA
)
R
Ta= 25°C
255
FORWARD VOLTAGE vs FORWARD CURRENT
VF - 1.0 to 100 uA
1
2
3
5
10
20
30
50
100
250
300
350
400
450
I - FORWARD CURRENT (uA)
V
-
F
O
RW
A
R
D
V
O
L
T
A
G
E
(m
V
)
F
Ta= 25°C
V
R
V
F
I R
High Voltage General Purpoise Diode
(continued)
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